Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Haeryong Kim"'
Autor:
Jeongil Bang, Eun Cheol Do, Haeryong Kim, Hyungjun Kim, Bo‐Eun Park, Byunghoon Na, Jooho Lee, Sehyuck Park, Ho Won Jang, Jaeho Lee
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract Perovskite‐oxide‐based capacitors, which exhibit high charge storage capacity, have attracted considerable attention as a potential candidate for overcoming the limitations of nanoscale integration. Unfortunately, a dead layer forms in t
Externí odkaz:
https://doaj.org/article/7c0a63ea3d7d449dbbdd55f026bd0e73
Autor:
Jeongil Bang, Jaeho Lee, Eun Cheol Do, Hyungjun Kim, Byunghoon Na, Haeryong Kim, Bo-Eun Park, Jooho Lee, Che-Heung Kim, Ho Won Jang, Yongsung Kim
Publikováno v:
NPG Asia Materials, Vol 15, Iss 1, Pp 1-7 (2023)
Abstract Capacitors based on ABO3-type perovskite oxides show considerable promise for overcoming the limitations of nanoscale integration with dynamic random access memory (DRAM) devices. Among the thermodynamically stable perovskite oxides, titanat
Externí odkaz:
https://doaj.org/article/bb1135d9b0774817898bd2466837a5d3
Publikováno v:
Tourism & Management Studies; 2024, Vol. 20 Issue 2, p69-78, 10p
Autor:
Dovran Amanov, Yeonchoo Cho, Seongjun Park, Hyeon-Jin Shin, Houk Jang, Haeryong Kim, Min-Hyun Lee, Renjing Xu, Donhee Ham
Publikováno v:
Nano Letters. 19:2411-2417
Atomically thin two-dimensional (2D) materials-such as transition metal dichalcogenide (TMD) monolayers and hexagonal boron nitride (hBN)-and their van der Waals layered preparations have been actively researched to build electronic devices such as f
Autor:
Youngjin Kim, Haeryong Kim, Dong Hee Han, Woojin Jeon, Ji Hyeon Hwang, Jeongil Bang, Eui Young Jung
Publikováno v:
Nanotechnology. 32(4)
Notwithstanding its excellent properties such as high work function and low resistance, Ru has not been widely applied in the preparation of electrodes for various electronic devices. This is because of the occurrence of severe morphological degradat
Autor:
Yeonchoo Cho, Sang-Woo Kim, Keun Wook Shin, Hyeon-Jin Shin, Sang A Han, Min-Hyun Lee, Kyung-Eun Byun, Chang-Hyun Kim, Haeryong Kim, Seong-Geol Nam, Seongjun Park
Publikováno v:
Nano Letters. 18:4878-4884
Metal-semiconductor junctions are indispensable in semiconductor devices, but they have recently become a major limiting factor precluding device performance improvement. Here, we report the modification of a metal/n-type Si Schottky contact barrier
Publikováno v:
Yonsei Business Review. 55:93-118
Autor:
Renjing, Xu, Houk, Jang, Min-Hyun, Lee, Dovran, Amanov, Yeonchoo, Cho, Haeryong, Kim, Seongjun, Park, Hyeon-Jin, Shin, Donhee, Ham
Publikováno v:
Nano letters. 19(4)
Atomically thin two-dimensional (2D) materials-such as transition metal dichalcogenide (TMD) monolayers and hexagonal boron nitride (hBN)-and their van der Waals layered preparations have been actively researched to build electronic devices such as f
Autor:
Insu Jeon, Keun Wook Shin, Yeonchoo Cho, Minsu Seol, Haeryong Kim, Min-Hyun Lee, Jiwoong Park, Myoungho Jeong, Hyeon-Jin Shin, Hyung-Ik Lee
Publikováno v:
Advanced Materials. 32:2003542
For practical device applications, monolayer transition metal dichalcogenide (TMD) films must meet key industry needs for batch processing, including the high-throughput, large-scale production of high-quality, spatially uniform materials, and reliab
Autor:
Donhee Ham, Minsu Seol, Seongjun Park, Min-Hyun Lee, Hyeon-Jin Shin, Haeryong Kim, Chengye Liu, Houk Jang, Henry Hinton
Publikováno v:
Advanced Materials. :2002431
2D semiconductors, especially transition metal dichalcogenide (TMD) monolayers, are extensively studied for electronic and optoelectronic applications. Beyond intensive studies on single transistors and photodetectors, the recent advent of large-area