Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Haengha Seo"'
Publikováno v:
ACS Applied Electronic Materials. 4:2005-2014
Autor:
Bo Wen Wang, Seungsoo Kim, Haewon Song, Haengha Seo, Xiangyuan Li, Jin Myung Choi, Jinwoo Choi, Jonghoon Shin, Cheol Seong Hwang
Publikováno v:
Journal of Materials Chemistry C. 10:6611-6620
To improve the water-resistance of MgO-based metal–insulator–metal capacitors, BeO/MgO/BeO/MgO/BeO stacked layers were deposited by atomic layer deposition using bis(cyclopentadienyl)magnesium and diethyl beryllium and O3 as an oxygen source.
Autor:
Woojin Jeon, Dae Seon Kwon, Dong Gun Kim, Haengha Seo, Cheol Seong Hwang, Junil Lim, Tae Kyun Kim
Publikováno v:
ACS Applied Materials & Interfaces. 13:23915-23927
Ruthenium (Ru) thin films deposited via atomic layer deposition (ALD) with a normal sequence and discrete feeding method (DFM) and their performance as a bottom electrode of dynamic random-access memory (DRAM) capacitors were compared. The DFM-ALD wa
Autor:
Haengha Seo, In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung‐Hae Choi, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials. 8:2200099
Autor:
Woongkyu Lee, Haeryoung Kim, Cheol Seong Hwang, Tae Kyun Kim, Junil Lim, Dae Seon Kwon, Haengha Seo, Heewon Paik, Dong Gun Kim
Publikováno v:
Journal of Physics D: Applied Physics. 54:185110
Y2O3/TiO2 bilayer thin films and Y-doped TiO2 (YTO) thin films were deposited on a Ge substrate by atomic layer deposition at a substrate temperature of 250 °C. They were used as gate insulators to examine the electrical properties of Pt/TiN/TiO2/Y2
Autor:
Woongkyu Lee, Tae Kyun Kim, Junil Lim, Dae Seon Kwon, Haengha Seo, Cheol Seong Hwang, Dong Gun Kim
Publikováno v:
Advanced Electronic Materials. 7:2000819