Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Haeju Choi"'
Publikováno v:
Nano Convergence, Vol 10, Iss 1, Pp 1-9 (2023)
Abstract Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a very promising process for manufacturing high-performance devices because the multiplication has been reported to overcome thermodynamic conversion l
Externí odkaz:
https://doaj.org/article/c9ed7f9c4ad141ecbce1ce41aff24a94
Autor:
Haeju Choi, Jinshu Li, Taeho Kang, Chanwoo Kang, Hyeonje Son, Jongwook Jeon, Euyheon Hwang, Sungjoo Lee
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
The potential energy efficiency of impact ionization field-effect transistors (I2FETs) is usually limited by stringent operational conditions. Here, the authors report I2FETs based on 2D WSe2, showing average subthreshold slopes down to 2.3 mV/dec an
Externí odkaz:
https://doaj.org/article/95d983853e4143d58198ebd0238403cf
Autor:
Yun Seong Cho, Dongjoon Rhee, Jihun Lee, Su Yeon Jung, Jeongha Eom, Vlastimil Mazanek, Bing Wu, Taeho Kang, Sungpyo Baek, Haeju Choi, Zdeněk Sofer, Sungjoo Lee, Joohoon Kang
Publikováno v:
EcoMat, Vol 5, Iss 8, Pp n/a-n/a (2023)
Abstract Platinum diselenide (PtSe2) has shown great potential as a candidate two‐dimensional (2D) material for broadband photodetectors and electrocatalysts because of its unique properties compared to conventional 2D transition metal dichalcogeni
Externí odkaz:
https://doaj.org/article/0822c2b2e40a4e72988ce875e62c60ec
Publikováno v:
Nanoscale. 15:5771-5777
A steep switching transistor (subthreshold swing, SS ∼32.8 mV dec−1) with low dielectric injection efficiency (ΔIGS/ΔIDS ∼10−6 is constructed by connecting an MoS2 FET and a WSe2 impact-ionisation based threshold switch.
Autor:
Yun Seong Cho, Dongjoon Rhee, Jihun Lee, Su Yeon Jung, Jeongha Eom, Vlastimil Mazanek, Bing Wu, Taeho Kang, Sungpyo Baek, Haeju Choi, Zdeněk Sofer, Sungjoo Lee, Joohoon Kang
Publikováno v:
EcoMat.
Autor:
Young Jae Kim, Hyeonje Son, Seung-Hyuk Choi, Haeju Choi, Jaeho Jeon, Jeong Ho Cho, Sungjoo Lee
Publikováno v:
ACS Applied Materials & Interfaces. 13:8692-8699
Recently, for overcoming the fundamental limits of conventional silicon technology, multivalued logic (MVL) circuits based on two-dimensional (2D) materials have received significant attention for reducing the power consumption and the complexity of
Publikováno v:
Nanophotonics, Vol 9, Iss 7, Pp 1831-1853 (2020)
Two-dimensional (2D) layers of transition metal carbides, nitrides, or carbonitrides, collectively referred to as MXenes, are considered as the new family of 2D materials for the development of functional building blocks for optoelectronic and photon
Publikováno v:
Applied Surface Science. 599:153667
Publikováno v:
Nanoscale. 11:21068-21073
For the realization of two-dimensional material-based high-performance electronic devices, the formation of a stable, high-quality metal-semiconductor contact is a key factor. Platinum diselenide (PtSe2), a group-10 transition metal dichalcogenide, i
Autor:
Haeju Choi, Seunghyuk Choi, Taeho Kang, Hyeonje Son, Chanwoo Kang, Euyheon Hwang, Sungjoo Lee
Publikováno v:
Advanced Optical Materials. 10:2201196