Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hae-Yeol Kim"'
Autor:
Yong Ho Jang, Choi Seung Chan, Mindoo Chun, Cho Hyung Nyuck, Hae Yeol Kim, Chang-Dong Kim, Sung Hak Jo, Soo Young Yoon, Changil Ryoo, Taewoong Moon, Binn Kim, In‐Jae Chung, Kwon-Shik Park, Nam Wook Cho
Publikováno v:
Journal of Information Display. 7:5-8
A novel a‐Si TFT integrated gate driver circuit using multi‐thread driving has been developed. The circuit consists of two independent shift registers alternating between the two modes, “wake” and “sleep”. The degradation of the circuit i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d173066c549fabb9f3f9bb33003f84d
https://doi.org/10.1080/15980316.2006.9652005
https://doi.org/10.1080/15980316.2006.9652005
Publikováno v:
Thin Solid Films. 402:296-301
A new annealing process using hydrogen plasma heating was suggested for the fabrication of poly-Si (polycrystalline silicon) films. This fabrication process had the advantages of low processing temperature approximately 450 °C and a short processing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de78c186969748bb983b7f318d1a06fa
https://doi.org/10.1016/s0040-6090(01)01683-2
https://doi.org/10.1016/s0040-6090(01)01683-2
Publikováno v:
Thin Solid Films. 359:268-274
To reveal the effect of modifications of the top and bottom layers on the crystallization of bilayers deposited by plasma-enhanced chemical vapor deposition (PECVD), we have investigated the solid-phase crystallization of a hydrogenated amorphous sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a625da187f8b6a6efdf1c7c9b13db86
https://doi.org/10.1016/s0040-6090(99)00761-0
https://doi.org/10.1016/s0040-6090(99)00761-0
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3240-3245
The crystallization behavior of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma enhanced chemical vapor deposition is investigated in view of the silicon–hydrogen (Si–Hn) bond characteristics. A-Si:H films deposited at various pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::295d67c00348a69a641e595fe90a5e5c
https://doi.org/10.1116/1.582049
https://doi.org/10.1116/1.582049
Publikováno v:
Thin Solid Films. 341:22-26
A large-area transformer coupled plasma (TCP) source has been designed and constructed. In our design, a plasma generation chamber and a radio-frequency (RF) antenna chamber have been separated with a dielectric material, and differentially pumped to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4804b03f6e03d331878b05dc132a6a2f
https://doi.org/10.1016/s0040-6090(98)01515-6
https://doi.org/10.1016/s0040-6090(98)01515-6
Publikováno v:
Thin Solid Films. 302:17-24
The effect of hydrogen on the crystallization of hydrogenated amorphous silicon (a-Si:H) films has been studied. a-Si:H films were prepared by plasma-enhanced chemical vapor deposition (PECVD) at various hydrogen dilution ratios (H 2 :SiH 4 ) and ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b85dc2a19d244cc5c0f3222c7dd274d
https://doi.org/10.1016/s0040-6090(96)09573-9
https://doi.org/10.1016/s0040-6090(96)09573-9
Publikováno v:
Thin Solid Films. 266:129-132
Using a modified gas chromatograph, gas evolution experiments have been performed on hydrogenated amorphous silicon carbide (a-SiC:H) films with different carbon contents prepared by plasma deposition, to obtain information concerning the structure a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d951630171164e19e496e86b3c395ee
https://doi.org/10.1016/0040-6090(95)06670-5
https://doi.org/10.1016/0040-6090(95)06670-5
Publikováno v:
IEEE Electron Device Letters. 24:733-735
Self-aligned, p-channel polycrystalline silicon thin-film transistors (TFTs) were fabricated by electric field enhanced crystallization of a-Si:H in contact with the Ni catalyst, where a chemical solution of 97.5% H/sub 2/O:1% HF:1.5% H/sub 2/O/sub 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5754fdce802183c278a3fde09a9ae9df
https://doi.org/10.1109/led.2003.820626
https://doi.org/10.1109/led.2003.820626
Kinetics of electric-field-enhanced crystallization of amorphous silicon in contact with Ni catalyst
Publikováno v:
Applied Physics Letters. 81:5180-5182
Electric-field-enhanced crystallization of hydrogenated amorphous silicon in contact with nickel catalyst (Ni/a-Si:H) has been investigated. In order to elucidate the crystallization kinetics quantitatively, in situ conductivity measurement was used.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fec6242f12c54b03b633ef5a43812fd
https://doi.org/10.1063/1.1532533
https://doi.org/10.1063/1.1532533
Autor:
Hyung Nyuck Cho, Nam Wook Cho, Taewoong Moon, Kwon-Shik Park, Woo-Seok Choi, Binn Kim, Seung Chan Choi, Yong Ho Jang, Soo Young Yoon, Chang-Dong Kim, Chang Il Ryoo, Hae Yeol Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 40:1088
The characteristic feature of an optimum design of a-Si gate driver circuits and its scaling properties are presented. The delay time of the output pulse of gate driver circuits with different layout characteristics was analyzed by a distributed-load
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbc623750939907a0ea8b5fa1230a3ed
https://doi.org/10.1889/1.3256472
https://doi.org/10.1889/1.3256472