Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Hae-Cheon Kim"'
Autor:
Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Crystals, Vol 11, Iss 11, p 1414 (2021)
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs
Externí odkaz:
https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e
Publikováno v:
Entropy, Vol 21, Iss 6, p 602 (2019)
Multi-label feature selection is an important task for text categorization. This is because it enables learning algorithms to focus on essential features that foreshadow relevant categories, thereby improving the accuracy of text categorization. Rece
Externí odkaz:
https://doaj.org/article/0ecb647ee8ce40f0941da2df5ca31399
Autor:
Sung-Jae Chang, Seong-Il Kim, Soo Cheol Kang, Kyu Jun Cho, Jong-Won Lim, Hae Cheon Kim, Hyun-Wook Jung, Sang-Heung Lee, Hokyun Ahn, Youn Sub Noh
Publikováno v:
ECS Transactions. 98:519-526
GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are intensively investigated for high power, high frequency [1] and aerospace application [2] due to its wide bandgap, high breakdown field, and high carrier densi
Publikováno v:
Pattern Recognition Letters. 136:279-285
Multilabel classification is the task of assigning relevant labels to an instance, and it has received considerable attention in recent years. This task can be performed by extending a single-label classifier, such as the naive Bayes classifier, to u
Autor:
Min Jeong Shin, Dong Min Kang, Hae Cheon Kim, Jongmin Lee, Hyun-Wook Jung, Jae-Won Do, Jong-Won Lim, Ho Kyun Ahn, Sungil Kim, Kyu-Jun Cho, Hyung Sup Yoon, Byoung-Gue Min
Publikováno v:
Journal of the Korean Physical Society. 71:360-364
We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and
Publikováno v:
Entropy, Vol 21, Iss 6, p 602 (2019)
Entropy
Volume 21
Issue 6
Entropy
Volume 21
Issue 6
Multi-label feature selection is an important task for text categorization. This is because it enables learning algorithms to focus on essential features that foreshadow relevant categories, thereby improving the accuracy of text categorization. Rece
Autor:
Hae Cheon Kim, Byoung Gue Min, Dong Min Kang, Jong-Won Lim, Hyung Sup Yoon, Ho Kyun Ahn, Sungil Kim, Chul Won Ju, Jongmin Lee
Publikováno v:
Journal of the Korean Physical Society. 67:654-657
We fabricated a 0.17-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC recessed by using ICP gate etching with a gas mixture of BCl3/Cl2. The ICP gate recess process exhibited an etch rate of 20 nm/min for the AlGaN layer and
Autor:
Dong Min Kang, Ho Kyun Ahn, Sungil Kim, Eun Soo Nam, Jong-Won Lim, Yong-Hwan Kwon, Hyung Sup Yoon, Hae Cheon Kim
Publikováno v:
Microwave and Optical Technology Letters. 57:212-216
This article describes the successful development and the performance of X-band 100 W pulsed SSPA using a 25 W GaN-on-SiC high electron mobility transistor (HEMT). The GaN HEMT with a gate length of 0.25 µm and a total gate width of 8 mm were fabric
Publikováno v:
ETRI Journal. 31:749-754
The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar tra
Publikováno v:
Transactions of the Korean Society of Mechanical Engineers B. 33:909-915