Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Hader, Joerg"'
Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombinations in bulk tellurium. It is shown that Auger processes dominate the los
Externí odkaz:
http://arxiv.org/abs/2208.05532
Autor:
Fuchs, Christian, Limame, Imad, Reinhard, Stefan, Lehr, Jannik, Hader, Jörg, Moloney, Jerome V., Bäumner, Ada, Koch, Stephan W., Stolz, Wolfgang
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improv
Externí odkaz:
http://arxiv.org/abs/2012.10996
Autor:
Fuchs, Christian, Baeumner, Ada, Brueggemann, Anja, Berger, Christian, Moeller, Christoph, Reinhard, Stefan, Hader, Joerg, Moloney, Jerome V., Koch, Stephan W., Stolz, Wolfgang
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss
Externí odkaz:
http://arxiv.org/abs/2012.01522
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works
Externí odkaz:
http://arxiv.org/abs/2008.04771
Autor:
Meckbach, Lars, Hader, Jörg, Neuhaus, Josefine, Huttner, Ulrich, Steiner, Johannes, Stroucken, Tineke, Moloney, Jerry V., Koch, Stephan W.
Publikováno v:
Phys. Rev. B 101, 075401 (2020)
The dynamics of band-gap renormalization and gain build-up in monolayer MoTe$_2$ is investigated by evaluating the non-equilibrium Dirac-Bloch equations with the incoherent carrier-carrier and carrier-phonon scattering treated via quantum-Boltzmann t
Externí odkaz:
http://arxiv.org/abs/1903.08553
For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscopic analysis is presented for the example of methylammonium lead iodide
Externí odkaz:
http://arxiv.org/abs/1810.11225
Publikováno v:
Appl. Phys. Lett. 111, 182103 (2017)
The electronic structure of bulk GaAs$_{1-x}$Bi$_x$ systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results show a Bi-induced splitting between the light-hole and heavy-hole bands a
Externí odkaz:
http://arxiv.org/abs/1709.09983
Autor:
Lammers, Christian, Stein, Markus, Berger, Christian, Möller, Christoph, Fuchs, Christian, Perez, Antje Ruiz, Rahimi-Iman, Arash, Hader, Jörg, Moloney, Jerome, Stolz, Wolfgang, Koch, Stephan W., Koch, Martin
Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. Fo
Externí odkaz:
http://arxiv.org/abs/1608.05250
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