Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hadass Inbar"'
Autor:
Shouvik Chatterjee, Felipe Crasto de Lima, John A. Logan, Yuan Fang, Hadass Inbar, Aranya Goswami, Connor Dempsey, Jason Dong, Shoaib Khalid, Tobias Brown-Heft, Yu-Hao Chang, Taozhi Guo, Daniel J. Pennachio, Nathaniel Wilson, Shalinee Chikara, Alexey Suslov, Alexei V. Fedorov, Dan Read, Jennifer Cano, Anderson Janotti, Christopher J. Palmstrøm
Publikováno v:
Physical Review Materials, vol 5, iss 12
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2faec490ae011de33858f58643764972
Autor:
Chris Palmstrom, Alexei V. Fedorov, Shouvik Chatterjee, Shoaib Khalid, Elliot Young, Taozhi Guo, Aranya Goswami, Hadass Inbar, Yu-Hao Chang, Anderson Janotti, Daniel Read
Publikováno v:
Science advances, vol 7, iss 16
Science Advances
Science Advances
Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bb201c055c30904d79dfd1dff34e6db
Autor:
Felipe Crasto de Lima, Tobias Brown-Heft, Shouvik Chatterjee, Abhishek Sharan, Shoaib Khalid, Yu-Hao Chang, Fernando P. Sabino, Aranya Goswami, Hadass Inbar, Anderson Janotti, Chris Palmstrom, Daniel Read, Alexei V. Fedorov
Publikováno v:
Physical Review B, vol 99, iss 12
Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a1364ab1950dc2cef1c867da3079b21
https://escholarship.org/uc/item/97b3n2zr
https://escholarship.org/uc/item/97b3n2zr
Autor:
Jiajia Luo, Junmo Kang, Mark C. Hersam, Itamar Balla, Hadallia Bergeron, Lincoln J. Lauhon, Vinod K. Sangwan, Alex Henning, Hadass Inbar, Megan E. Beck
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a10345257e4db390bdb6f62ac82a5d2e
http://arxiv.org/abs/1802.01043
http://arxiv.org/abs/1802.01043
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 28(4)
Collagen-hydroxyapatite interfaces compose an important building block of bone structures. While it is known that the nanoscale structure of this elementary building block can affect the mechanical properties of bone, a systematic understanding of th