Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Hacene Lahreche"'
Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates
Autor:
J. Thuret, Hacene Lahreche, Timothy J. Anderson, Jenshan Lin, Philippe Bove, J. Kim, Stephen J. Pearton, Brent P. Gila, M. Hlad, Lars F. Voss, Fan Ren
Publikováno v:
Journal of Electronic Materials. 37:384-387
The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-CutTM process is reported. This provides a low-cost, high-ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb97d115df87d8eef66235efd9ed6154
https://doi.org/10.1007/s11664-007-0326-y
https://doi.org/10.1007/s11664-007-0326-y
Publikováno v:
ECS Transactions. 3:271-286
Since the middle of the 90's, many techniques of growing GaN epitaxy have been developed, using either MOCVD or MBE growth methods. Historically, Sapphire and Silicon Carbide have been primarily the substrates used to gorw the GaN Epilayers. The reas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f5574da226c23cbbe05f3b0d65dcaa
https://doi.org/10.1149/1.2357216
https://doi.org/10.1149/1.2357216
Autor:
Brent P. Gila, C. R. Abernathy, Fan Ren, M. Hlad, Hacene Lahreche, Soohwan Jang, J. Thuret, Philippe Bove, Stephen J. Pearton, Hyucksoo Yang, C. J. Pan, Jenn Inn Chyi
Publikováno v:
Journal of Electronic Materials. 35:685-690
Si diffusion into GaN was studied as a function of encapsulant type (SiO2 or SiNx) and diffusion temperature. Using a SiO2 encapsulant, the Si diffusion exhibited an activation energy of 0.57 eV with a prefactor of 2.07×10−4 cm2 sec−1 in the tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f5b25b58d179d8d18988c18c6ecc5c6
https://doi.org/10.1007/s11664-006-0121-1
https://doi.org/10.1007/s11664-006-0121-1
Publikováno v:
Journal of Crystal Growth. 231:329-334
Crack-free GaN/Si(1 1 1) thin layers (0.5 μm) were grown by metal organic vapour phase epitaxy, using either an AlN buffer layer or (AlN/GaN) strained superlattices. High-resolution X-ray diffraction exhibited a full-width at half-maximum as low as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::357d8e3749cd8fec6d801713953a7ba3
https://doi.org/10.1016/s0022-0248(01)01458-0
https://doi.org/10.1016/s0022-0248(01)01458-0
Autor:
Bernard Beaumont, Robert Triboulet, Nicolas Grandjean, Philippe Lemasson, Gérard Neu, S. Porowski, Hacene Lahreche, M. Teisseire, Izabella Grzegory, Fabrice Semond
Publikováno v:
Physica B: Condensed Matter. :39-53
We present an overview of recent selective photoluminescence (PL) experiments on shallow levels in ZnSe and GaN. Through two electron transitions (TET) and electronic Raman scattering (ERS) investigations on solid phase recrystallized bulk ZnSe doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc8a50245313de2faa81619bcc0239cc
https://doi.org/10.1016/s0921-4526(01)00403-3
https://doi.org/10.1016/s0921-4526(01)00403-3
Autor:
Bernard Beaumont, Mathieu Leroux, M. Laügt, P. Vennéguès, Hacene Lahreche, O. Tottereau, Pierre Gibart, P. Lorenzini
Publikováno v:
Journal of Crystal Growth. 217:13-25
Single-crystal GaN thin films (500 nm) were grown by low-pressure metal-organic vapour-phase epitaxy (LP-MOVPE) on Si(1 1 1) substrates using AlN buffer layers. Depending on the AlN growth temperature, the growth mode of GaN can be either two- or thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d32da0a88eb6a4843f59f2307c80dc22
https://doi.org/10.1016/s0022-0248(00)00478-4
https://doi.org/10.1016/s0022-0248(00)00478-4
Autor:
Pierre Gibart, Bernard Beaumont, Philippe Vennéguès, O. Tottereau, V. Bousquet, Hacene Lahreche, M. Laügt
Publikováno v:
Materials Science Forum. :1487-1490
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe96c14adf2f79fc2c707c5440b10fa3
https://doi.org/10.4028/www.scientific.net/msf.338-342.1487
https://doi.org/10.4028/www.scientific.net/msf.338-342.1487
Publikováno v:
Diamond and Related Materials. 9:452-455
We have studied the growth mechanisms of GaN and AlGaN layers with low aluminium incorporation (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb73a73c00ecfcffb4b58a37c9bb7b9
https://doi.org/10.1016/s0925-9635(99)00280-0
https://doi.org/10.1016/s0925-9635(99)00280-0
Publikováno v:
Journal of Applied Physics. 87:577-583
The growth of GaN on 6H–SiC is three dimensional (3D) and results in the formation of large islands presenting hexagonal truncated shape with {1–101} lateral facets and a top {0001} facet. In this work, we present a three steps growth process tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86b7d6e8de2369472a619350c0a70449
https://doi.org/10.1063/1.371902
https://doi.org/10.1063/1.371902
Autor:
Robert Langer, J.C. De Jaeger, Nicolas Defrance, C. Gaquiere, M. Rousseau, M.A. di Forte-Poisson, Xiao Tang, Hacene Lahreche, Virginie Hoel, J. Thorpe, Y. Douvry
Publikováno v:
IEEE Electron Device Letters. 30:596-598
In this letter, successful operation at 10 GHz of T-gate HEMTs on epitaxial structures grown by metal-organic chemical vapor deposition (MOCVD) or MBE on composite substrates is demonstrated. The used device fabrication process is very similar to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3cc1d70a8f2d6064e7c18d61850e301
https://doi.org/10.1109/led.2009.2019972
https://doi.org/10.1109/led.2009.2019972