Zobrazeno 1 - 10
of 6 094
pro vyhledávání: '"Habib K. A."'
Autor:
Digby, Simon
Publikováno v:
Bulletin of the School of Oriental and African Studies, University of London, 1976 Jan 01. 39(2), 453-458.
Externí odkaz:
https://www.jstor.org/stable/616822
Autor:
Habib, K. A.1 (AUTHOR) razzaq@esid.uji.es, Cano, D. L.1 (AUTHOR), Serrano-Mira, J.1 (AUTHOR), Encinas, Emilo Rayón2 (AUTHOR), Dosta, R. S.3 (AUTHOR)
Publikováno v:
Journal of Thermal Spray Technology. Feb2024, Vol. 33 Issue 1, p290-307. 18p.
Publikováno v:
Applied Physics Letters, vol. 114, no. 1, pp. 013507, 2019
We articulate the challenges and opportunities of unconventional devices using the photon like flow of electrons in graphene, such as Graphene Klein Tunnel (GKT) transistors. The underlying physics is the employment of momentum rather than energy fil
Externí odkaz:
http://arxiv.org/abs/1810.02924
Autor:
Zhou, Xiaodong, Kerelsky, Alexander, Elahi, Mirza M., Wang, Dennis, Habib, K. M. Masum, Sajjad, Redwan N., Agnihotri, Pratik, Lee, Ji Ung, Ghosh, Avik W., Ross, Frances M., Pasupathy, Abhay N.
Publikováno v:
ACS Nano, vol. 13, no. 2, pp. 2558, 2019
Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on t
Externí odkaz:
http://arxiv.org/abs/1810.02308
Autor:
Wang, Ke, Elahi, Mirza M., Habib, K. M. Masum, Taniguchi, Takashi, Watanabe, Kenji, Ghosh, Avik W., Lee, Gil-Ho, Kim, Philip
Publikováno v:
Proceedings of the National Academy of Sciences, p. 201816119, 2019
The linear energy-momentum dispersion, coupled with pseudo-spinors, makes graphene an ideal solid-state material platform to realize an electronic device based on Dirac-Fermionic relativistic quantum mechanics. Employing local gate control, several e
Externí odkaz:
http://arxiv.org/abs/1809.06757
Autor:
Tan, Yaohua, Elahi, Mirza M., Tsao, Han-Yu, Habib, K. M. Masum, Barker, N. Scott, Ghosh, Avik W.
We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs)
Externí odkaz:
http://arxiv.org/abs/1705.08263
Publikováno v:
In Results in Physics February 2022 33
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Ge, Supeng, Habib, K. M. Masum, De, Amrit, Barlas, Yafis, Wickramaratne, Darshana, Neupane, Mahesh R., Lake, Roger K.
Publikováno v:
Phys. Rev. B 95, 045303 (2017)
Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $\theta$ of the h-BN with respect to the graphene layers with different physical mechanisms
Externí odkaz:
http://arxiv.org/abs/1609.01369