Radiation resistance of MBE-grown GaInP/GaAs cascade solar cells flown onboard Equator-S satellite

Autor: Haapamaa, J ^*, Pessa, M, La Roche, G

Publikováno v: In Solar Energy Materials and Solar Cells 2001 66(1):573-578

Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy

Autor: Pessa, M ^*, Toivonen, M, Savolainen, P, Orsila, S, Sipilä, P, Saarinen, M, Melanen, P, Vilokkinen, V, Uusimaa, P, Haapamaa, J

Publikováno v: In Thin Solid Films 15 May 2000 367(1-2):260-266

Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

Autor: Li, W., Likonen, Jari, Haapamaa, J., Pessa, Markus

Publikováno v: Li, W, Likonen, J, Haapamaa, J & Pessa, M 2000, ' Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy ', Journal of Crystal Growth, vol. 209, no. 2-3, pp. 459-462 . https://doi.org/10.1016/S0022-0248(99)00598-9

The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=355e65625b88::0203f6b8d60cd97abba64d98cbbce03c
https://cris.vtt.fi/en/publications/8bb4a66a-c8c6-47f7-8c32-5d50083c8006

High-performance, high-reliability 880-nm diode laser bars and fiber-array packages.

Autor: Fouksman, M., Lehconen, S., Haapamaa, J., Kennedy, K., Li, J.

Publikováno v: Proceedings of SPIE; Nov2006, Issue 1, p61040A-61040A-6, 6p

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