Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Ha-Jun Sung"'
Autor:
Minwoo Choi, Ha‐Jun Sung, Bonwon Koo, Jong‐Bong Park, Wooyoung Yang, Youngjae Kang, Yongyoung Park, Yongnam Ham, Dong‐Jin Yun, Dongho Ahn, Kiyeon Yang, Chang Seung Lee
Publikováno v:
Advanced Science, Vol 11, Iss 32, Pp n/a-n/a (2024)
Abstract Threshold‐switching devices based on amorphous chalcogenides are considered for use as selector devices in 3D crossbar memories. However, the fundamental understanding of amorphous chalcogenide is hindered owing to the complexity of the lo
Externí odkaz:
https://doaj.org/article/4029bf720e2f46fda5a0dcfe538ea48e
Autor:
Dae Yun Kang, Bo-Hyun Kim, Tae Ho Lee, Jae Won Shim, Sungmin Kim, Ha-Jun Sung, Kee Joo Chang, Tae Geun Kim
Publikováno v:
Nano-Micro Letters, Vol 13, Iss 1, Pp 1-15 (2021)
Abstract Ultrathin film-based transparent conductive oxides (TCOs) with a broad work function (WF) tunability are highly demanded for efficient energy conversion devices. However, reducing the film thickness below 50 nm is limited due to rapidly incr
Externí odkaz:
https://doaj.org/article/7cd12b52dc8e45eaa9ea49d2591b83cc
Publikováno v:
New Journal of Physics, Vol 16, Iss 11, p 113055 (2014)
We investigate the electronic properties of monolayer and bilayer MoS _2 on α -quartz substrate through first-principles density functional calculations. Due to the coupling of the MoS _2 with the substrate, the valence band edge state at the Brillo
Externí odkaz:
https://doaj.org/article/716eae9be24646c7aadd6187cdc3e605
Autor:
Bo Hyun Kim, Dae Yun Kang, Tae Ho Lee, Sungmin Kim, Jae Won Shim, Ha-Jun Sung, Kee-Joo Chang, Tae Geun Kim
Publikováno v:
Nano-Micro Letters, Vol 13, Iss 1, Pp 1-15 (2021)
Nano-Micro Letters
Nano-Micro Letters
Highlights Dopant-tunable transparent conductive oxide (≤ 50 nm) fabricated via electric-field-driven metal implantation (m-TCOs; m= Ni, Ag, and Cu) is demonstrated.The m-TCOs exhibit ultrahigh transparency, low sheet resistance, and broad work fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::017db652b56c51ec971bf2b36e2d004d
https://doaj.org/article/7cd12b52dc8e45eaa9ea49d2591b83cc
https://doaj.org/article/7cd12b52dc8e45eaa9ea49d2591b83cc
Publikováno v:
The Journal of Physical Chemistry C. 123:1839-1845
Silicene has a two-dimensional buckled honeycomb lattice and is chemically reactive because of its mixed sp2–sp3 bonding character unlike graphene. Despite recent advances in epitaxial growth, it r...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1cc638e13f852518fd96f7e5169d23e
https://doi.org/10.1021/acs.jpcc.8b10475
https://doi.org/10.1021/acs.jpcc.8b10475
Publikováno v:
Physical Review Materials. 4
Understanding the band alignment at oxide surfaces is of great importance for designing oxide-surface-based electronic, catalytic, and photocatalytic applications. We systematically investigate the band alignment of (001) surfaces of $A(\mathrm{II})B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da0110443cf665e2a361bb5edabde79b
https://doi.org/10.1103/physrevmaterials.4.044606
https://doi.org/10.1103/physrevmaterials.4.044606
Publikováno v:
Physical Review Materials. 4
Antiperovskites have recently been attracting considerable attention because of their intriguing physical properties. We theoretically investigate polymorphism of mixed-anion antiperovskites ${M}_{3}^{2+}{X}^{3\ensuremath{-}}{\mathrm{N}}^{3\ensuremat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08b30c0fe71080fc208589ee4f67a738
https://doi.org/10.1103/physrevmaterials.4.044601
https://doi.org/10.1103/physrevmaterials.4.044601
Publikováno v:
Physical Chemistry Chemical Physics. 18:16361-16366
For practical applications of two-dimensional topological insulators, large band gaps and Dirac states within the band gap are desirable because they allow for device operation at room temperature and quantum transport without dissipation. Based on f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77abacea141aeaed0a0588ad2abce457
https://doi.org/10.1039/c6cp02204a
https://doi.org/10.1039/c6cp02204a
Autor:
Sung Wng Kim, Haeyong Kang, Jung Ho Kim, Dong Hoon Keum, Heejun Yang, Kee-Joo Chang, Ha-Jun Sung, Jae-Yeol Hwang, Min Kan, Young Hee Lee, Duk-Hyun Choe, Suyeon Cho
Publikováno v:
Nature Physics. 11:482-486
Monoclinic transition metal dichalcogenides offer the possibility of topological quantum devices, but they are difficult to realize. One route may be through switching from the common hexagonal phase, for which a method is now shown. Layered transiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba03f867e28e56078f7273e5a2e710f7
https://doi.org/10.1038/nphys3314
https://doi.org/10.1038/nphys3314
Publikováno v:
Physical review letters. 120(15)
Diamond Si is a semiconductor with an indirect band gap that is the basis of modern semiconductor technology. Although many metastable forms of Si were observed using diamond anvil cells for compression and chemical precursors for synthesis, no metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c699ca08e44c102fac166a488adb4206
https://pubmed.ncbi.nlm.nih.gov/29756903
https://pubmed.ncbi.nlm.nih.gov/29756903