Solution-processed NO2 gas sensor based on poly(3-hexylthiophene)-doped PbS quantum dots operable at room temperature.

Autor: Kwon, JinBeom¹, Ha, Yuntae^1,2, Choi, Suji^1,2, Jung, Dong Geon¹, An, Hee kyung¹, Kong, Seong Ho² shkong@knu.ac.kr, Jung, Daewoong¹ dwjung@kitech.re.kr

Publikováno v: Scientific Reports. 9/4/2024, Vol. 14 Issue 1, p1-13. 13p.

Solution-processed NO 2 gas sensor based on poly(3-hexylthiophene)-doped PbS quantum dots operable at room temperature.

Autor: Kwon J; Advanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu, 42994, Republic of Korea., Ha Y; Advanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu, 42994, Republic of Korea.; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea., Choi S; Advanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu, 42994, Republic of Korea.; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea., Jung DG; Advanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu, 42994, Republic of Korea., An HK; Advanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu, 42994, Republic of Korea., Kong SH; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea. shkong@knu.ac.kr., Jung D; Advanced Mobility System Group, Korea Institute of Industrial Technology (KITECH), Daegu, 42994, Republic of Korea. dwjung@kitech.re.kr.

Publikováno v: Scientific reports [Sci Rep] 2024 Sep 04; Vol. 14 (1), pp. 20600. Date of Electronic Publication: 2024 Sep 04.