Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Ha, Sieu D."'
Autor:
Weinstein, Aaron J., Reed, Matthew D., Jones, Aaron M., Andrews, Reed W., Barnes, David, Blumoff, Jacob Z., Euliss, Larken E., Eng, Kevin, Fong, Bryan, Ha, Sieu D., Hulbert, Daniel R., Jackson, Clayton, Jura, Michael, Keating, Tyler E., Kerckhoff, Joseph, Kiselev, Andrey A., Matten, Justine, Sabbir, Golam, Smith, Aaron, Wright, Jeffrey, Rakher, Matthew T., Ladd, Thaddeus D., Borselli, Matthew G.
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and conf
Externí odkaz:
http://arxiv.org/abs/2202.03605
Autor:
Ha, Wonill, Ha, Sieu D., Choi, Maxwell D., Tang, Yan, Schmitz, Adele E., Levendorf, Mark P., Lee, Kangmu, Chappell, James M., Adams, Tower S., Hulbert, Daniel R., Acuna, Edwin, Noah, Ramsey S., Matten, Justine W., Jura, Michael P., Wright, Jeffrey A., Rakher, Matthew T., Borselli, Matthew G.
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of
Externí odkaz:
http://arxiv.org/abs/2107.10916
Autor:
Mei, Antonio B., Milosavljevic, Ivan, Simpson, Amanda L., Smetanka, Valerie A., Feeney, Colin P., Seguin, Shay M., Ha, Sieu D., Ha, Wonill, Reed, Matthew D.
Publikováno v:
Appl. Phys. Lett. 118, 204001 (2021)
Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and
Externí odkaz:
http://arxiv.org/abs/2012.08653
Publikováno v:
Phys. Rev. Applied 2, 064003 (2014)
Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coup
Externí odkaz:
http://arxiv.org/abs/1411.4179
Publikováno v:
Phys. Rev. B 90, 085116 (2014)
Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase t
Externí odkaz:
http://arxiv.org/abs/1408.0514
For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict wit
Externí odkaz:
http://arxiv.org/abs/1309.7394
Publikováno v:
J. Appl. Phys. 113, 184501 (2013)
Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demons
Externí odkaz:
http://arxiv.org/abs/1306.0292
Publikováno v:
Appl. Phys. Lett. 102, 183102 (2013)
The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resi
Externí odkaz:
http://arxiv.org/abs/1305.2111
Autor:
Ha, Sieu D., Jaramillo, R., Silevitch, D. M., Schoofs, Frank, Kerman, Kian, Baniecki, John D., Ramanathan, Shriram
Publikováno v:
Phys. Rev. B 87, 125150 (2013)
The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-depende
Externí odkaz:
http://arxiv.org/abs/1301.1968
The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 {\deg}C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show
Externí odkaz:
http://arxiv.org/abs/1101.3538