Zobrazeno 1 - 10
of 212
pro vyhledávání: '"HUMPHREYS CJ"'
The influence of growth temperature and V/III-ratio on the surface morphology of (001) cubic zincblende GaN epilayers during metal organic vapour phase epitaxy growth has been investigated using atomic force microscopy and transmission electron micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31627f91f879eb9db03d02858691a2f6
The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest due to their potential to reduce the amount of energy consumed in lighting. The current consensus is that electrons and holes distribute themselves through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddaa6e7898c6c22e30e1a657bd8cfd68
https://www.repository.cam.ac.uk/handle/1810/273755
https://www.repository.cam.ac.uk/handle/1810/273755
Autor:
Schulz, S, Tanner, DSP, O'Reilly, EP, Caro, MA, Tang, F, Griffiths, JT, Oehler, F, Kappers, MJ, Oliver, RA, Humphreys, CJ, Sutherland, D, Davies, MJ, Dawson, P
We present a combined theoretical and experimental analysis of the optical properties of $\textit{m}$-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abbb529399fc4f0ee46b42bf864c32bf
https://www.repository.cam.ac.uk/handle/1810/262185
https://www.repository.cam.ac.uk/handle/1810/262185
Autor:
Kundys, D, Sutherland, D, Davies, MJ, Oehler, F, Griffiths, J, Dawson, P, Kappers, MJ, Humphreys, CJ, Schulz, S, Tang, F, Oliver, RA
We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar (11$\bar 2$0) $\textit{a}$-plane and (10$\bar 1$0) m-plane free-standing bulk GaN substrates where the In conten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94ee72133c5c311e03f8221f06b9ec6a
https://www.repository.cam.ac.uk/handle/1810/261445
https://www.repository.cam.ac.uk/handle/1810/261445
Autor:
Taylor, RA, Robinson, JW, Rice, JH, Lee, KH, Jarjour, A, Na, JH, Yasin, S, Oliver, RA, Kappers, MJ, Humphreys, CJ, Andrew, G, Briggs, D, Williams, DP, O'Reilly, EP, Andreev, AD, Arakawa, Y
We present measurements of microphotoluminescence decay dynamics for single InGaN quantum dots. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the two-di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::226a16806669ef805840e3aaa8053027
https://ora.ox.ac.uk/objects/uuid:be814952-5189-4a1b-a34c-4f8e9f37d90f
https://ora.ox.ac.uk/objects/uuid:be814952-5189-4a1b-a34c-4f8e9f37d90f
Autor:
Cockayne, DJH, Gjonnes, J, Humphreys, CJ, Lehmpfuhl, G, Murphy, J, Shmueli, U, Spence, JCH, Tanaka, M, Witte, NS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e7f7a5b097129ceed4a0257651dd397
https://ora.ox.ac.uk/objects/uuid:49f635b2-7cc4-44b1-8395-7256c0a01272
https://ora.ox.ac.uk/objects/uuid:49f635b2-7cc4-44b1-8395-7256c0a01272
Autor:
Qian, H, Lee, KB, Vajargah, SH, Novikov, SV, Guiney, I, Zhang, S, Zaidi, ZH, Jiang, S, Wallis, DJ, Foxon, CT, Humphreys, CJ, Houston, PA
The structural properties and electrical conduction mechanisms of p-type amorphous GaN$_{1−x}$ As$_{x}$ /n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5 × 10$^{19}$ cm$^{-3}$ is achieved which allows a specific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::954c2a558f2a62b28f39c74e4ed90263
https://www.repository.cam.ac.uk/handle/1810/263985
https://www.repository.cam.ac.uk/handle/1810/263985
The hetero-epitaxy of (11¯22) GaN on (10¯10) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low-temperature AlN interlayers (ILs) as w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______109::e06f602aaa39952ddbc0e57a3058d746
https://www.repository.cam.ac.uk/handle/1810/249172
https://www.repository.cam.ac.uk/handle/1810/249172
Autor:
Zhang, S, Cui, Y, Griffiths, JT, Fu, WY, Freysoldt, C, Neugebauer, J, Humphreys, CJ, Oliver, RA
InₓGa₁₋ₓN structures epitaxially grown on a-plane or m-plane GaN exhibit in-plane optical polarization. Linear elasticity theory treats the two planes equivalently and is hence unable to explain the experimentally observed higher degree of li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______109::f2954064a51b2469f39e1882f073da12
https://www.repository.cam.ac.uk/handle/1810/252698
https://www.repository.cam.ac.uk/handle/1810/252698
Autor:
Oehler, F, Sutherland, D, Zhu, T, Emery, R, Badcock, TJ, Kappers, MJ, Humphreys, CJ, Dawson, P, Oliver, RA
Non-polar a-plane gallium nitride (GaN) lms have been grown on r-plane (1102) sapphire by metal organic vapour phase epitaxy (MOVPE). A total of ve in-situ defect reduction techniques for a-plane GaN are compared, including two variants with a low te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______109::cd8906b50089652e3afe0c4608966c0d
https://www.repository.cam.ac.uk/handle/1810/245893
https://www.repository.cam.ac.uk/handle/1810/245893