Zobrazeno 1 - 10 of 1 401 pro vyhledávání: '"HUMPHREYS CJ"'
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Akademický článek
Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers.
Autor: Weng Z; School of Physical and Chemical Sciences, Queen Mary University of London, London E1 4NS, United Kingdom., Wallis R; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Wingfield B; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Evans P; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Baginski P; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Kainth J; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Nikolaenko AE; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Lee LY; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Baginska J; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Gillin WP; School of Physical and Chemical Sciences, Queen Mary University of London, London E1 4NS, United Kingdom., Guiney I; Paragraf Limited, 7-8 West Newlands, Somersham PE28 3EB, Cambridgeshire, United Kingdom., Humphreys CJ; School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom., Fenwick O; School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom.
Publikováno v: ACS applied electronic materials [ACS Appl Electron Mater] 2024 Sep 16; Vol. 6 (10), pp. 7276-7285. Date of Electronic Publication: 2024 Sep 16 (Print Publication: 2024).
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2
Akademický článek
Autor: Humphreys CJ; Département de médecine, Université McMaster, Hamilton, Ont. christopher.humphreys@medportal.ca., Liu RR; Département de médecine, Université McMaster, Hamilton, Ont., Simms TM; Département de médecine, Université McMaster, Hamilton, Ont.
Publikováno v: CMAJ : Canadian Medical Association journal = journal de l'Association medicale canadienne [CMAJ] 2024 Apr 21; Vol. 196 (15), pp. E537-E538. Date of Electronic Publication: 2024 Apr 21.
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3
Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN
Autor: Lee, LY, Frentrup, M, Kappers, MJ, Oliver, RA, Humphreys, CJ, Wallis, DJ
The influence of growth temperature and V/III-ratio on the surface morphology of (001) cubic zincblende GaN epilayers during metal organic vapour phase epitaxy growth has been investigated using atomic force microscopy and transmission electron micro
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31627f91f879eb9db03d02858691a2f6
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4
The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
Autor: Hopkins, MA, Allsopp, DWE, Kappers, MJ, Oliver, RA, Humphreys, CJ
The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest due to their potential to reduce the amount of energy consumed in lighting. The current consensus is that electrons and holes distribute themselves through
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddaa6e7898c6c22e30e1a657bd8cfd68
https://www.repository.cam.ac.uk/handle/1810/273755
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5
Akademický článek
Alternative and Complementary Treatments for Obstructive Sleep Apnea.
Autor: Kawala CR; Sleep Medicine Program, Division of Respirology, Department of Medicine, University of Toronto, Toronto, Ontario, Canada., Humphreys CJ; Sleep Medicine Program, Division of Respirology, Department of Medicine, University of Toronto, Toronto, Ontario, Canada., Khaper T; Sleep Medicine Program, Division of Respirology, Department of Medicine, University of Toronto, Toronto, Ontario, Canada., Ryan CM; Sleep Medicine Program, Division of Respirology, Department of Medicine, University of Toronto, Toronto, Ontario, Canada.
Publikováno v: American journal of respiratory and critical care medicine [Am J Respir Crit Care Med] 2021 Nov 01; Vol. 204 (9), pp. 1097.
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6
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of $\textit{m}$-plane InGaN/GaN quantum wells
Autor: Schulz, S, Tanner, DSP, O'Reilly, EP, Caro, MA, Tang, F, Griffiths, JT, Oehler, F, Kappers, MJ, Oliver, RA, Humphreys, CJ, Sutherland, D, Davies, MJ, Dawson, P
We present a combined theoretical and experimental analysis of the optical properties of $\textit{m}$-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abbb529399fc4f0ee46b42bf864c32bf
https://www.repository.cam.ac.uk/handle/1810/262185
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7
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on $\textit{a}$-plane and $\textit{m}$-plane GaN substrates
Autor: Kundys, D, Sutherland, D, Davies, MJ, Oehler, F, Griffiths, J, Dawson, P, Kappers, MJ, Humphreys, CJ, Schulz, S, Tang, F, Oliver, RA
We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar (11$\bar 2$0) $\textit{a}$-plane and (10$\bar 1$0) m-plane free-standing bulk GaN substrates where the In conten
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94ee72133c5c311e03f8221f06b9ec6a
https://www.repository.cam.ac.uk/handle/1810/261445
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8
Time-resolved dynamics in single InGaN quantum dots
Autor: Taylor, RA, Robinson, JW, Rice, JH, Lee, KH, Jarjour, A, Na, JH, Yasin, S, Oliver, RA, Kappers, MJ, Humphreys, CJ, Andrew, G, Briggs, D, Williams, DP, O'Reilly, EP, Andreev, AD, Arakawa, Y
We present measurements of microphotoluminescence decay dynamics for single InGaN quantum dots. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the two-di
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::226a16806669ef805840e3aaa8053027
https://ora.ox.ac.uk/objects/uuid:be814952-5189-4a1b-a34c-4f8e9f37d90f
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10
Characterization of p-GaN$_{1−x}$ As$_{x}$/n-GaN PN junction diodes
Autor: Qian, H, Lee, KB, Vajargah, SH, Novikov, SV, Guiney, I, Zhang, S, Zaidi, ZH, Jiang, S, Wallis, DJ, Foxon, CT, Humphreys, CJ, Houston, PA
The structural properties and electrical conduction mechanisms of p-type amorphous GaN$_{1−x}$ As$_{x}$ /n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5 × 10$^{19}$ cm$^{-3}$ is achieved which allows a specific
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::954c2a558f2a62b28f39c74e4ed90263
https://www.repository.cam.ac.uk/handle/1810/263985
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