Zobrazeno 1 - 10
of 154
pro vyhledávání: '"HU Changlong"'
Autor:
ZHANG Xuefeng, HU Changlong
Publikováno v:
Jichu yixue yu linchuang, Vol 44, Iss 6, Pp 753-757 (2024)
Aldosterone is a kind of steroid hormone produced by the zona glomerulosa (ZG) cells of the adrenal cortex which plays a crucial regulatory role in fluid-electrolyte balance and blood pressure stability. Aldosterone biosynthesis is a calcium-dependen
Externí odkaz:
https://doaj.org/article/bc54b95648a442c0a3f7c475291fb77e
Autor:
Li, Liang, Hu, Min, Hu, Changlong, Li, Bowen, Zhao, Shanguang, Zhang, Guobin, Li, Liangbin, Jiang, Jun, Zou, Chongwen
Publikováno v:
Nano Letters 2023, 23, 7297
The mass storage and removal in solid conductors always played vital role on the technological applications such as modern batteries, permeation membranes and neuronal computations, which were seriously lying on the ion diffusion and kinetics in bulk
Externí odkaz:
http://arxiv.org/abs/2205.13414
Publikováno v:
In International Review of Financial Analysis November 2024 96 Part B
Publikováno v:
In Journal of Cleaner Production 15 August 2024 467
Autor:
Hu, Changlong, Li, Liang, Wen, Xiaolei, Chen, Yuliang, Li, Bowen, Ren, Hui, Zhao, Shanguang, Zou, Chongwen
Publikováno v:
Appl. Phys. Lett. 119, 121101 (2021)
Manipulating the strain induced poly-domains and phase transition in correlated oxide material are important for high performance devices fabrication. Though the electronic transport in the strained oxide film at macroscopic scales can be directly me
Externí odkaz:
http://arxiv.org/abs/2101.07093
Autor:
Wang, Yuqi, Zhang, Yuchen, Hu, Jiawei, Pan, Chengfang, Gao, Yiming, Liu, Qingzhuo, Xu, Wendong, Xue, Lei, Hu, Changlong
Publikováno v:
In Neurobiology of Stress January 2024 28
Autor:
Li, Bowen, Hu, Min, Ren, Hui, Hu, Changlong, Li, Liang, Zhang, Guozhen, Jiang, Jun, Zou, Chongwen
Publikováno v:
J. Phys. Chem. Lett. 2020, 11, 10045
Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crystal, the pre-existing VO is always removed via careful post-annealing tr
Externí odkaz:
http://arxiv.org/abs/2007.07505
The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n junction is usually fixed once the unit is fabricated. Here, we proposed an
Externí odkaz:
http://arxiv.org/abs/2006.16570
Autor:
Chen, Yuliang, Hu, Changlong, Xie, Liyan, Zhou, Xiaoyu, Li, Bowen, Ren, Hui, Li, Liang, Zhang, Guobin, Jiang, Jun, Zou, Chongwen
Publikováno v:
COMMUNICATIONS MATERIALS (2021) 2:34
Doping is an effective way to tune the property of metal oxides1-5, for achieving functional oxide electronics6-8. Previously we developed a controllable hydrogen doping technology at ambient conditions by use of electron-proton synergistic doping st
Externí odkaz:
http://arxiv.org/abs/2005.08819
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