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pro vyhledávání: '"HFO"'
In this research, we have fabricated a Ta/HfO$_{2-X}$/Mo-based single-cell memristor, a unique configuration worldwide. The synaptic behaviour of Tantalum and Molybdenum electrodes on an HfOx-based memristor device has been investigated. HfO$_{2-X}$
Externí odkaz:
http://arxiv.org/abs/2410.13888
Autor:
Xhameni, Aferdita, AlMutairi, AbdulAziz, Guo, Xuyun, Chircă, Irina, Wen, Tianyi, Hofmann, Stephan, Nicolosi, Valeria, Lombardo, Antonio
We demonstrate low power, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide heterostructures are
Externí odkaz:
http://arxiv.org/abs/2408.07466
The advances of machine-learned force fields have opened up molecular dynamics (MD) simulations for compounds for which ab-initio MD is too resource-intensive and phenomena for which classical force fields are insufficient. Here we describe a neural-
Externí odkaz:
http://arxiv.org/abs/2408.02429
A DFT+$U$+$V$ study of pristine and oxygen-deficient HfO$_2$ with self-consistent Hubbard parameters
HfO$_2$-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications. Oxygen vacancies, particular
Externí odkaz:
http://arxiv.org/abs/2409.01795
Heracles: A HfO$\mathrm{_2}$ Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations
Autor:
Fehlings, Luca, Ali, Md Hanif, Gibertini, Paolo, Gallicchio, Egidio A., Ganguly, Udayan, Deshpande, Veeresh, Covi, Erika
This paper presents a physics-based compact model for circuit simulations in a SPICE environment for HfO2-based ferroelectric capacitors (FeCaps). The model has been calibrated based on experimental data obtained from HfO2-based FeCaps. A thermal mod
Externí odkaz:
http://arxiv.org/abs/2410.07791
Publikováno v:
npj Computational Materials 10, 188 (2024)
Since the first report of ferroelectricity in nanoscale HfO$_2$-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and industry, and continues to do so. Despite its deceivingly simple chem
Externí odkaz:
http://arxiv.org/abs/2405.03558
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at
Externí odkaz:
http://arxiv.org/abs/2405.10909
The metastable nature of the ferroelectric phase of HfO$_2$ is a significant impediment to its industrial application as a functional ferroelectric material. In fact, no polar phases exist in the bulk phase diagram of HfO$_2$, which shows a dominant
Externí odkaz:
http://arxiv.org/abs/2401.05288
Autor:
Yun, Jung Min1,2 (AUTHOR) msd426@khu.ac.kr, Park, Min Ho1,2 (AUTHOR) triolight@khu.ac.kr, Kim, Yu Bin1,2 (AUTHOR) bebeto@khu.ac.kr, Choi, Min Jung1,2 (AUTHOR) okcmj@khu.ac.kr, Kim, Seunghwan3,4 (AUTHOR) clam1127@kist.re.kr, Yi, Yeonjin4 (AUTHOR), Park, Soohyung3,5 (AUTHOR) soohyung.park@kist.re.kr, Kang, Seong Jun1,2 (AUTHOR) junkang@khu.ac.kr
Publikováno v:
Materials (1996-1944). Oct2024, Vol. 17 Issue 19, p4739. 8p.
Autor:
Kim, Taegi1 (AUTHOR), Lee, Doowon2 (AUTHOR), Chae, Myoungsu3 (AUTHOR), Kim, Kyeong-Heon4 (AUTHOR), Kim, Hee-Dong1 (AUTHOR) khd0708@sejong.ac.kr
Publikováno v:
Sensors (14248220). Oct2024, Vol. 24 Issue 19, p6382. 12p.