Zobrazeno 1 - 2
of 2
pro vyhledávání: '"HEMTs transistors"'
Autor:
Hideto Miyake, Yvon Cordier, Joff Derluyn, Idriss Abid, Jash Mehta, Farid Medjdoub, Stefan Degroote
Publikováno v:
Electronics
Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩
Electronics, MDPI, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩
Electronics, Vol 10, Iss 635, p 635 (2021)
Volume 10
Issue 6
Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩
Electronics, MDPI, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩
Electronics, Vol 10, Iss 635, p 635 (2021)
Volume 10
Issue 6
High power electronics using wide bandgap materials are maturing rapidly, and significant market growth is expected in a near future. Ultra wide bandgap materials, which have an even larger bandgap than GaN (3.4 eV), represent an attractive choice of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ecc06efc9f546559307ce8764bc27fb
https://hal.science/hal-03164517/file/electronics-10-00635.pdf
https://hal.science/hal-03164517/file/electronics-10-00635.pdf
Autor:
Petitdidier, Sébastien
Les transistors HEMTs (High Electron Mobility Transistors) de la filière GaN sont destinés à des applications dans les domaines militaire et spatial. C’est pourquoi nous avons étudié l’influence de trois types de stress électriques : à can
Externí odkaz:
http://www.theses.fr/2017NORMC201/document