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pro vyhledávání: '"H.W. Shim"'
Akademický článek
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Autor:
Todd H. Hubing, H.W. Shim
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility. 47:1004-1008
The electric fields that couple traces on printed circuit boards to attached cables can generate common-mode currents that result in significant radiated emissions. Previous work has shown that these radiated emissions can be estimated based on the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9708df6c87a80a072deaf8553a4844ea
https://doi.org/10.1109/temc.2005.859059
https://doi.org/10.1109/temc.2005.859059
Publikováno v:
Synthetic Metals. 144:61-68
ZnO nanostructures were synthesized over NiO-coated Si substrate by a thermal evaporation of Zn powders in a vertical chemical vapor deposition (CVD) reactor. The ZnO nanostructures had a needle-like morphology and the diameter of the structures decr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76a24eb9fc32d53b0fb304d571651671
https://doi.org/10.1016/j.synthmet.2004.01.010
https://doi.org/10.1016/j.synthmet.2004.01.010
Autor:
Kee Suk Nahm, Y.H. Mo, Gyeong-Su Park, Sang Hyun Lee, K.Y. Lim, Eun-Kyung Suh, J.W. Yang, H.W. Shim, Tae Yun Kim
Publikováno v:
Korean Journal of Chemical Engineering. 21:257-261
GaN nanowires were successfully grown on a Ni-coated Si substrate with a direct reaction of gallium and ammonia in a home-made vertical tubular chemical vapor deposition reactor. The grown GaN nanowires were uniformly distributed across the Si substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::865e81b0f71882e69a5fd18929124c71
https://doi.org/10.1007/bf02705407
https://doi.org/10.1007/bf02705407
Publikováno v:
Chemical Physics Letters. 363:134-138
Well-aligned single-crystalline zinc oxide (ZnO) nanowires with high density were successfully synthesized on nickel monoxide (NiO) catalyzed alumina substrate through a simple metal–vapor deposition method at an extremely low temperature (450 °C)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a21cff624b28e3f554a65d0083a4bd55
https://doi.org/10.1016/s0009-2614(02)01145-4
https://doi.org/10.1016/s0009-2614(02)01145-4
Autor:
Y.B. Hahn, Hyung Jae Lee, H.W. Shim, Young Hun Seo, Eun-Kyung Suh, Sun Jung Kim, Kee Suk Nahm, Kee Young Lim
Publikováno v:
Journal of Electronic Materials. 28:970-974
The origin of the radiative recombination leading to yellow luminescence (YL) has been elucidated by the study of luminescence properties of GaN films grown with two different gas feeding methods. GaN films were grown on a (0001) sapphire substrate i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d309eb5a5d3878efd2deebfdd7f07454
https://doi.org/10.1007/s11664-999-0206-8
https://doi.org/10.1007/s11664-999-0206-8
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
H.W. Shim, Byung-Teak Lee, H.J. Lee, Yun-Ju Hwang, Kyong-Chol Kim, Dae-Kwang Kim, Young Hun Seo, Eun Kyung Suh, Kee Suk Nahm
Publikováno v:
Materials Science Forum. :199-202
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4086f5c1ca38c74b5402e7a73fa2aa1
https://doi.org/10.4028/www.scientific.net/msf.264-268.199
https://doi.org/10.4028/www.scientific.net/msf.264-268.199
Autor:
H.J. Lee, Kyong-Chol Kim, H.W. Shim, Kee Suk Nahm, Young Hun Seo, Eun Kyung Suh, Yun-Ju Hwang
Publikováno v:
Materials Science Forum. :195-198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df8926ff978e44f80f2bc59b10b1b05f
https://doi.org/10.4028/www.scientific.net/msf.264-268.195
https://doi.org/10.4028/www.scientific.net/msf.264-268.195
Publikováno v:
Journal of Applied Physics. 82:5103-5106
Heteroepitaxial GaAs layers were grown on Si (001) substrates by metalorganic chemical vapor deposition. The tetragonal distortion induced by the lattice and the thermal expansion coefficient mismatches gives substantial effects on the acceptor energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0ebe936471773e935ab18dd7936e6ee
https://doi.org/10.1063/1.366311
https://doi.org/10.1063/1.366311