Zobrazeno 1 - 10
of 87
pro vyhledávání: '"H.S. Reehal"'
Autor:
J. Ball, H.S. Reehal
Publikováno v:
Thin Solid Films. 520:2467-2473
The Au catalysed, vapour–liquid–solid growth of Si nanowires on Si substrates of different orientations has been studied using electron cyclotron resonance plasma-assisted chemical vapour deposition (ECRCVD). ECRCVD plasma excitation is found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::367001f980cc7c517c3032e09c9131b6
https://doi.org/10.1016/j.tsf.2011.10.019
https://doi.org/10.1016/j.tsf.2011.10.019
Autor:
G. D. K. Mahanama, H.S. Reehal
Publikováno v:
Vacuum. 86:178-183
The passivation of crystalline Si solar cells using nitrous oxide (N 2 O) electron cyclotron resonance (ECR) plasma discharges has been studied and compared with ECR hydrogen passivation. The cells consisted of ECRCVD grown microcrystalline Si emitte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::500626c0a263776a641dcfd788a2a770
https://doi.org/10.1016/j.vacuum.2011.06.001
https://doi.org/10.1016/j.vacuum.2011.06.001
Publikováno v:
Solar Energy Materials and Solar Cells. 93:1978-1985
Silver nanoparticles have been fabricated on glass and silicon substrates, and silicon solar cells, by evaporation of 10 nm layers followed by thermal annealing. Distinct localized surface plasmon resonances are observed in the optical spectra of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d7d06d540f316b48df6a9c68ec48a0
https://doi.org/10.1016/j.solmat.2009.07.014
https://doi.org/10.1016/j.solmat.2009.07.014
Publikováno v:
Journal of Crystal Growth. 299:309-315
This work reports on the low temperature ( ⩽ 550 ∘ C ) epitaxial growth of Si films on polycrystalline seed layers made by aluminium-induced crystallisation (AIC) on glass. The seed layers were chemically mechanically polished before use and elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eca825610b5bc9a96614fbe5d6dfc56
https://doi.org/10.1016/j.jcrysgro.2006.11.327
https://doi.org/10.1016/j.jcrysgro.2006.11.327
Autor:
G. Ekanayake, H.S. Reehal
Publikováno v:
Vacuum. 81:272-278
Al-induced crystallisation of microcrystalline Si thin films prepared by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR–PECVD) on glass and SiO 2 coated Si wafers has been studied. The starting structure was substrate/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5562728b2b496d0488c26eb7e2ea9327
https://doi.org/10.1016/j.vacuum.2006.03.031
https://doi.org/10.1016/j.vacuum.2006.03.031
Publikováno v:
Journal of Crystal Growth. 293:351-358
Al-induced crystallisation of microcrystalline Si (μc-Si:H) thin films prepared by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) on SiO 2 -coated Si wafers has been studied. The starting structure was substrate/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea950303e48be66deaceeffc6b4d644
https://doi.org/10.1016/j.jcrysgro.2006.05.083
https://doi.org/10.1016/j.jcrysgro.2006.05.083
Autor:
H.S. Reehal, Stefan Gall, I. Sieber, J. Klein, Jens Schneider, T. Quinn, Walther Fuhs, M. Muske, Andrey Sarikov
Publikováno v:
Journal of Crystal Growth. 287:423-427
In the aluminum-induced layer exchange process polycrystalline silicon thin films can be formed on foreign substrates at low temperatures. These films exhibit a preferential (1 0 0) crystal orientation, that depends on the annealing temperature. Furt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cada3e0e0cdba0383af218638d0132c
https://doi.org/10.1016/j.jcrysgro.2005.11.057
https://doi.org/10.1016/j.jcrysgro.2005.11.057
Autor:
G. D. K. Mahanama, H.S. Reehal
Publikováno v:
International Journal of Electronics. 92:525-537
The dark and illuminated I–V characteristics of simple, p–n junction crystalline silicon solar cells having microcrystalline or epitaxial emitters have been studied at various temperatures. Low temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b25820847df9d104aa744209a38f1de
https://doi.org/10.1080/00207210500172172
https://doi.org/10.1080/00207210500172172
Autor:
Nandu B. Chaure, Shweta Chaure, Aseel Hassan, Rifat Capan, Asim K. Ray, A. Ghermazion, H.S. Reehal
Publikováno v:
Vacuum. 77:231-235
X-ray diffraction, atomic force microscopy and electrical studies were performed on 2–3 μm thick diamond films on silicon substrates. The films were produced by the microwave plasma chemical vapour deposition method. The films were polycrystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae82487788b9139550ec74682cd5c6f3
https://doi.org/10.1016/j.vacuum.2004.09.023
https://doi.org/10.1016/j.vacuum.2004.09.023
Publikováno v:
Surface and Coatings Technology. 135:126-138
Diamond coatings up to ∼60-μm thick have been grown by microwave plasma CVD (MPCVD) on sintered tungsten carbide (WC) substrates, and their erosive wear properties are investigated under high velocity air–sand erosion testing. Two different sint
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7721e16e4c539ae6ff7b3922871ac1d8
https://doi.org/10.1016/s0257-8972(00)01083-5
https://doi.org/10.1016/s0257-8972(00)01083-5