Zobrazeno 1 - 10
of 210
pro vyhledávání: '"H.S. Gamble"'
Publikováno v:
Vacuum. 81:1207-1212
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8cfe0b958715d1c637a2b724b0fd83
https://doi.org/10.1016/j.vacuum.2007.01.017
https://doi.org/10.1016/j.vacuum.2007.01.017
Autor:
Yunghong Wu, Zhirun Hu, Qiang Chen, J.A.C. Stewart, B.M. Armstrong, Vincent Fusco, H.S. Gamble, Suidong Yang
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:641-646
A surface-oriented planar Schottky diode for use as a detector diode on Si monolithic microwave integrated circuits (MMIC's) was developed. The active n-on-n/sup +/ and contact n/sup +/ regions were doped on the high-resistivity silicon substrate usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eac06874ef1a36855bade1f4f074923f
https://doi.org/10.1109/22.668676
https://doi.org/10.1109/22.668676
Publikováno v:
Applied Physics A: Materials Science & Processing. 66:S1067-S1071
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::405d20b0ef22675918f1b22becd913fa
https://doi.org/10.1007/s003390051299
https://doi.org/10.1007/s003390051299
Publikováno v:
Applied Physics A. 66:1067-1071
Gex. The layers were grown on oxidised silicon substrates using a rapid thermal chemical vapour deposition (RTCVD) reactor. Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ee2c688689d9b3bb7443757c2f7132
https://doi.org/10.1007/pl00022817
https://doi.org/10.1007/pl00022817
Publikováno v:
Thin Solid Films. 294:149-152
Thin Si 1− y C y films with a range of carbon contents have been prepared by both solid-phase epitaxy (SPE) and rapid thermal chemical vapour deposition (RTCVD) techniques. For SPE growth, layers with carbon levels of up to 1.6 at.% exhibit strong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f90a7d5809bd915adaf055acce6573d3
https://doi.org/10.1016/s0040-6090(96)09389-3
https://doi.org/10.1016/s0040-6090(96)09389-3
Autor:
G.A. Armstrong, H.S. Gamble
Publikováno v:
Solid State Phenomena. :231-242
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::780f8062ddbf04179b88699363a657bd
https://doi.org/10.4028/www.scientific.net/ssp.37-38.231
https://doi.org/10.4028/www.scientific.net/ssp.37-38.231
Autor:
S. Bhattacharya, J. McCarthy, B.M. Armstrong, H.S. Gamble, G.K. Dalapati, S. Das, S. Chakraborty, C.K. Maiti, T.S. Perova, R.A. Moore
Publikováno v:
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b09b98ec77ce1f84550e2f1d5c64b34
https://doi.org/10.1109/icmel.2004.1314652
https://doi.org/10.1109/icmel.2004.1314652
A SPICE based thermal model for the estimation of peak current capability of thyristor based devices
Publikováno v:
[1992] Proceedings of the IEEE International Symposium on Industrial Electronics.
A thermal model of a thyristor, using an electrical analogue to heat flow in a layer, developed for use in the prediction of peak current capability of p-n-p-n devices, is presented. For any given current, a power waveform, representing the total pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::862dbe87fb23b116f7b25083992b8f0a
https://doi.org/10.1109/isie.1992.279700
https://doi.org/10.1109/isie.1992.279700
Autor:
H.S. Gamble, A. Moore, C. K. Maiti, S. Bhattacharya, B.M. Armstrong, T. Perova, John McCarthy, Siddhartha Das, Goutam Kumar Dalapati
Publikováno v:
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).
We report the deposition and physical characterization of Ge-rich layers on relaxed SiGe/Si using virtual substrate technology by low pressure chemical vapour deposition and formation of different gate dielectrics. Gate dielectrics such as GeO/sub 2/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::316e567ebfa850ebe22e05a6325af749
https://doi.org/10.1109/iwgi.2003.159181
https://doi.org/10.1109/iwgi.2003.159181
Publikováno v:
Proceedings of MELECON '94. Mediterranean Electrotechnical Conference.
Technologies for the production of buried titanium disilicide layers in silicon are described. Silicide direct bonding to silicon dioxide has required thinning of the wafer to provide void free bonding. Bonding of titanium coated silicon to silicon o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc7ce8eeff0e2e708c45eaf93987ab7
https://doi.org/10.1109/melcon.1994.381013
https://doi.org/10.1109/melcon.1994.381013