A prognostic score to identify women at increased risk for abnormal uterine bleeding during anticoagulation for venous thromboembolism

Autor: Gabrielle Sarlon-Bartoli, Juan Criado, Saskia Middeldorp, José Antonio Nieto, María del Carmen Díaz-Pedroche, Farès Moustafa, Nuria Ruiz-Giménez, Benjamin Brenner, Manuel Monreal, Pierpaolo DI Micco, Paolo Prandoni, Dominique Farge-Bancel, Raquel Barba, Pierpaolo Di Micco, Laurent Bertoletti, Sebastian Schellong, Inna Tzoran, Abilio Reis, Marijan Bosevski, Henri Bounameaux, Radovan Malý, Peter Verhamme, Joseph A. Caprini, Hanh My Bui, M.D. Adarraga, P. Agudo, C. Amado, J.I. Arcelus, A. Ballaz, J. Bascuñana, R. Barba, C. Barbagelata, M. Barrón, B. Barrón-Andrés, A. Blanco-Molina, F. Beddar Chaib, E. Botella, I. Cañas, R. Carrero-Arribas, I. Casado, P. Cerdá, L. Chasco, J. Criado, C. de Ancos, J. de Miguel, J. del Toro, P. Demelo-Rodríguez, A.M. Díaz-Brasero, M.C. Díaz-Pedroche, J.A. Díaz-Peromingo, I.M. Domínguez, A. Dubois-Silva, J.C. Escribano, F. Espósito, A.I. Farfán-Sedano, C. Falgá, C. Fernández-Capitán, B. Fernández-Jiménez, J. Fernández-Muixi, J.L. Fernández-Reyes, C. Font, I. Francisco, F. Galeano-Valle, M.A. García, F. García-Bragado, M. García de Herreros, O. Gavín-Blanco, A. Gil-Díaz, C. Gómez-Cuervo, A.M. Gómez-Mosquera, M. Gonzalez-Moreno, E. Grau, L. Guirado, J. Gutiérrez, L. Hernández-Blasco, L. Jara-Palomares, M.J. Jaras, D. Jiménez, I. Jou, M.D. Joya, B. Lacruz, S. Lainez-Justo, Latorre A, Lima J, Lobo Jl, M. López-De la Fuente, L. López-Jiménez, M. López-Meseguer, P. López-Miguel, J.J. López-Núñez, R. López-Reyes, J.B. López-Sáez, M.A. Lorente, A. Lorenzo, O. Madridano, A. Maestre, P.J. Marchena, J.M. Martín-Guerra, F. Martín-Martos, M. Mellado, E. Mena, J. Moisés, M.I. Mercado, M. Monreal, A. Muñoz-Blanco, G. Muñoz-Gamito, M.V. Morales, J.A. Nieto, E. Noguera-Gras, M.J. Núñez-Fernández, M. Olid-Velilla, J. Osorio, S. Otalora, R. Otero, D. Paredes-Ruiz, P. Parra, V. Parra, J.M. Pedrajas, M. Pérez-López, M.L. Peris, M.L. Pesce, J.A. Porras, J. Poyo-Molina, R. Puchades, A. Riera-Mestre, F. Rivera-Civico, A. Rivera-Gallego, M. Roca, V. Rosa, A. Rodríguez-Cobo, C. Rodríguez-Matute, P. Ruiz-Artacho, N. Ruiz-Giménez, J. Ruiz-Ruiz, G. Salgueiro, T. Sancho, V. Sendín, P. Sigüenza, S. Soler, B. Suárez-Rodríguez, J.M. Suriñach, G. Tiberio, M.I. Torres, A. Torres-Sánchez, J. Trujillo-Santos, F. Uresandi, E. Usandizaga, R. Valle, J.F. Varona, L. Vela, J.R. Vela, A. Villalobos, P. Villares, C. Ay, S. Nopp, I. Pabinger, M.M. Engelen, C. Martens, P. Verhamme, H.H.B. Yoo, J.D. Arguello, A.C. Montenegro, J. Roa, J. Hirmerova, R. Malý, S. Accassat, L. Bertoletti, A. Bura-Riviere, J. Catella, R. Chopard, F. Couturaud, O. Espitia, S. El Harake, R. Le Mao, I. Mahé, F. Moustafa, L. Plaisance, G. Sarlon-Bartoli, P. Suchon, E. Versini, S. Schellong, A. Braester, B. Brenner, G. Kenet, I. Tzoran, P. Sadeghipour, M. Basaglia, F. Bilora, C. Bortoluzzi, B. Brandolin, M. Ciammaichella, A. De Angelis, F. Dentali, P. Di Micco, E. Imbalzano, S. Merla, R. Pesavento, P. Prandoni, C. Siniscalchi, A. Tufano, A. Visonà, N. Vo Hong, B. Zalunardo, D. Kigitovica, E. Rusa, A. Skride, S. Fonseca, M. Manuel, J. Meireles, M. Bosevski, A. Eftimova, M. Zdraveska, H. Bounameaux, L. Mazzolai, A. Aujayeb, J.A. Caprini, I. Weinberg, H.M. Bui

Publikováno v: Thrombosis Update, Vol 13, Iss , Pp 100148- (2023)

Introduction: Little is known about the clinical characteristics of women at increased risk for abnormal uterine bleeding (UB) during anticoagulation for venous thromboembolism (VTE). Methods: We used the RIETE registry to identify the baseline chara

Externí odkaz: https://doaj.org/article/e7194376719644deb8af633070b04de6

Special reliability features for Hf-based high-/spl kappa/ gate dielectrics

Autor: L.Y. Song, W. He, Miaomiao Wang, H.M. Bu, Philip J. Tobin, X. W. Wang, Tso-Ping Ma, Hsing-Huang Tseng

Publikováno v: IEEE Transactions on Device and Materials Reliability. 5:36-44

Several special reliability features for Hf-based high-/spl kappa/ gate dielectrics are highlighted, including: 1) trapping-induced threshold voltage (V/sub th/) shift is much more of a concern than TDDB in determining the operating lifetime; 2) n-ch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::129687fce74958a6525f07cfa5e77579
https://doi.org/10.1109/tdmr.2005.845329

Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing

Autor: B.L. Laube, X.W. Wang, H.M. Bu, C. Caragianis-Broadbridge, Tso-Ping Ma

Publikováno v: Materials Science Forum. :993-996

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56946daa7e5f30bfa8eb522b37c43dd7
https://doi.org/10.4028/www.scientific.net/msf.389-393.993

Reliability improvement on HfO/sub 2/ nMOSFETs by replacing polySi gate with TaSiN gate

Autor: Tso-Ping Ma, H.-H. Tseng, L. Hebert, L.Y. Song, P.J. Tobin, H.M. Bu

Publikováno v: IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

This paper reports significantly improved charge trapping lifetime of HfO/sub 2/ nMOSFETs by using TaSiN gate instead of polySi gate. It demonstrates that the trapping induced threshold voltage shift is much more of a concern than TDDB in determining

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7de6b0310aeea8c48d5cbc74eaffec8d
https://doi.org/10.1109/vtsa.2005.1497109

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Autor: Z.Z. Chen, R. Zhang, Y.D. Zheng, P. Chen, Ben Shen, H.M. Bu, W. P. Li, Yu Zhou

Publikováno v: MRS Proceedings. 639

Metal-insulator-semiconductor structures are fabricated by depositing SiO2 films on an MOCVD-grown n-type GaN epitaxial layer and a GaN/Al0.4Ga0.6N/GaN double heterojunction. The SiO2 films are grown by plasma-enhanced chemical vapor deposition. High

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c16f62176b7b510a22c90e44361f6cd2
https://doi.org/10.1557/proc-639-g11.24