Zobrazeno 1 - 10
of 145
pro vyhledávání: '"H.L. Lung"'
Autor:
H. Y. Ho, Asit Kumar Ray, Erh-Kun Lai, Kuo I-Ting, L. Buzi, Huai-Yu Cheng, Marinus Hopstaken, Wanki Kim, H.L. Lung, Fabio Carta, Y. C. Chou, C. W. Yeh, Christian Lavoie, Robert L. Bruce, Lynne Gignac, C. H. Yang, Wei-Chih Chien, Nanbo Gong, Cheng-Wei Cheng, Matthew J. BrightSky, Ming-Hsiu Lee
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
By incorporating Si into AsSeGe system, we demonstrate a 3D stackable OTS+PCM memory in a 1k by 1k cross-point memory array with extremely low $\mathrm{V}_{\mathrm{tS}}$ drift (~0V after 3 days from programming), wide $\mathrm{V}_{\mathrm{tS}}/\mathr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ac84d3cba365a7eece8e43ff7939fb4
https://doi.org/10.1109/vlsitechnology18217.2020.9265039
https://doi.org/10.1109/vlsitechnology18217.2020.9265039
Autor:
C. W. Yeh, Erh-Kun Lai, Y. C. Chou, Wanki Kim, Robert L. Bruce, H.L. Lung, Yu-Yu Lin, Ning Li, Matthew J. BrightSky, C. H. Yang, Fabio Carta, Henry K. Utomo, Cheng-Wei Cheng, H. Y. Ho, Christopher P. Miller, Huai-Yu Cheng, L. Buzi, Asit Kumar Ray, Nanbo Gong, T. Perri, Lynne Gignac, Kuo I-Ting, Wei-Chih Chien
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We present the first MLC operation for OTS-PCM with comprehensive operation algorithm study. An ADM chip with fast write speed ( 10 9 cycles) are shown indicating the potential for high performance MLC OTS-PCM. A desirable 2-bits/cell operation up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ee15f66231eef4a20d5debb82cbe6c
https://doi.org/10.1109/vlsitechnology18217.2020.9265020
https://doi.org/10.1109/vlsitechnology18217.2020.9265020
Autor:
D.-Y. Lee, C.H. Wang, Y.H. Lin, M.L. Wei, M.H. Lee, H.L. Lung, K.Y. Hsieh, K.C. Wang, C.Y. Lu
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67d515be43eb7d01976b736d9140d2b
https://doi.org/10.7567/ssdm.2019.h-6-02
https://doi.org/10.7567/ssdm.2019.h-6-02
Autor:
Y. F. Lin, M. Briahtxky, Y. C. Chou, Erh-Kun Lai, Huai-Yu Cheng, H.L. Lung, Cheng-Wei Cheng, C. H. Yang, Kuo I-Ting, A. Rav, Wei-Chih Chien, Nanbo Gong, Robert L. Bruce, Fabio Carta, C. W. Yeh, Lynne Gignac, H. Y. Ho, John M. Papalia, Wanki Kim
Publikováno v:
2019 Symposium on VLSI Technology.
We present a scaling study toward lZnm node 3D Cross-point PCM (XPCM) for Storage Class Memory (SCM) applications. The low operation current, and low metal line loading resistance are desired to avoid a wide operation voltage distribution in a cross-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8b767e227d4c9052b3e492cc915f380
https://doi.org/10.23919/vlsit.2019.8776516
https://doi.org/10.23919/vlsit.2019.8776516
Superb Endurance and Appropriate Vth of PCM Pillar Cell using Buffer Layer for 3D Cross-Point Memory
Autor:
Matthew J. BrightSky, Huai-Yu Cheng, N. Gang, Cheng-Wei Cheng, Erh-Kun Lai, C. W. Yeh, Asit Kumar Ray, Robert L. Bruce, H.L. Lung, Kuo I-Ting, L.M. Gignac, Fabio Carta, C. H. Yang, Wanki Kim, John M. Papalia, Wei-Chih Chien
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW).
A reliability study for phase change memory (PCM) pillar cell is performed. We found that without a buffer layer, the PCM pillar cell shows earlier endurance failure than its mushroom counterpart, and the underlying failure mechanism is attributed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e89a34d21d4029032c2b0c898f1c5e8
https://doi.org/10.1109/imw.2019.8739477
https://doi.org/10.1109/imw.2019.8739477
Autor:
Erh-Kun Lai, Robert L. Bruce, Huai-Yu Cheng, Fabio Carta, H.L. Lung, Wanki Kim, Lynne Gignac, Cheng-Wei Cheng, C. W. Yeh, Matthew J. BrightSky, Hiroyuki Miyazoe, Nanbo Gong, Asit Kumar Ray, Kuo I-Ting, Wei-Chih Chien, C. H. Yang, John M. Papalia
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW).
A reliability study for PCM and OTS intermixing was addressed. The buffer layer between PCM and OTS plays a key role in preventing PCM/OTS intermixing after BEOL processing thermal treatment. Besides cycling endurance, performance degradation due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b5a2c530a6a6f4b666c01999293fb1
https://doi.org/10.1109/imw.2019.8739648
https://doi.org/10.1109/imw.2019.8739648
Autor:
Keh-Chung Wang, Feng-Ming Lee, Yu-Yu Lin, G.Y. Chen, Chun-Chang Lu, Po-Hao Tseng, K.Y. Hsieh, Meng-Chyi Wu, H.L. Lung, Dai-Ying Lee, Ming-Hsiu Lee, K.C. Hsu
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
The forming voltage and temperature for creating the first filament in the RRAM device are found having impacts on RRAM reliability. The correlation between the forming temperature and the required voltage was evaluated on the WOx/TiOx RRAM devices,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42ca870061dcab74ec90149213f83f0
https://doi.org/10.1109/vlsi-tsa.2019.8804662
https://doi.org/10.1109/vlsi-tsa.2019.8804662
Autor:
Kwok Hung Au, Valentin Baloche, Beth M. Beadle, Pierre Blanchard, Pierre Busson, Jason W. Chan, Jimmy Y.W. Chan, Yap-Hang Chan, Amy T.Y. Chang, Honglin Chen, Zhi-Jian Chen, A.K.S. Chiang, Chi Leung Chiang, Horace C.W. Choi, Vincent Chong, James C.H. Chow, Wei Dai, W. Deng, Andy Futreal, Fei Han, Sai-Yin Ho, S.C.M. Huang, Shao Hui Huang, K.F. Hui, Amit Jain, Mingfang Ji, Michael K.M. Kam, Pek-Lan Khong, Damian Khor, Josephine Mun-Yee Ko, Dora L.W. Kwong, Jessica W.Y. Lai, Ka On Lam, Tai Chung Lam, Tai-Hing Lam, Quynh-Thu Le, Anne W.M. Lee, Nancy Y. Lee, Victor H.F. Lee, Kenneth W.S. Li, Jia-Huang Lin, W.T. Lin, Fei-Fei Liu, K.W. Lo, Taixiang Lu, H.L. Lung, Maria Li Lung, Zhi-Ming Mai, N.K. Mak, Jaap M. Middeldorp, Dennis Kai Ming Ip, Alice W.Y. Ng, Wai Tong Ng, Roger K.C. Ngan, John M. Nicholls, Brian O'Sullivan, Jian Ji Pan, Jean Pierre Pignon, A.B. Rickinson, Danny Rischin, Esdy Rozali, Eric Stanbridge, Henry C.K. Sze, Han Chong Toh, C.M. Tsang, S.W. Tsao, Vince Vardhanabhuti, Who-Whong Wang, William Ignace Wei, Weimin Ye, Timothy T.C. Yip, Y.L. Yip, Sue S. Yom, Lawrence S. Young, Yao Yu, Hui Yuan, Kam Tong Yuen, Jing Feng Zong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00912442395b7d107ca24b4d2e6d43c5
https://doi.org/10.1016/b978-0-12-814936-2.01002-6
https://doi.org/10.1016/b978-0-12-814936-2.01002-6
Autor:
Wei-Chih Chien, Lynne Gignac, Erh-Kun Lai, Cheng-Wei Cheng, F. M. Lee, Wanki Kim, H. Y. Ho, Huai-Yu Cheng, C. H. Yang, H.L. Lung, Robert L. Bruce, Christian Lavoie, Fabio Carta, Ming-Hsiu Lee, C. W. Yeh, Y. F. Lin, Matthew J. BrightSky, Asit Kumar Ray, Kuo I-Ting
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
New selector materials with very-low I OFF and optimum V th . based on As-Se-Ge chalcogenides are studied. An optimized composition is proposed, which achieves a good trade-off between thermal stability and cycling endurance and it is successfully in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66269e97578f8205658512bd2f732602
https://doi.org/10.1109/iedm.2018.8614580
https://doi.org/10.1109/iedm.2018.8614580
Autor:
C.H. Wang, F.M. Lee, Y.Y. Lin, P.H. Tseng, K.C. Hsu, D.Y. Lee, M.H. Lee, H.L. Lung, K.Y. Hsieh, K.C. Wang, C.Y. Lu
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e32b193dcf623f8644e87d3660de6f5d
https://doi.org/10.7567/ssdm.2018.b-1-04
https://doi.org/10.7567/ssdm.2018.b-1-04