Zobrazeno 1 - 10
of 75
pro vyhledávání: '"H.L. Glass"'
Publikováno v:
C26. ADVANCING CARE IN ACUTE AND CHRONIC ILLNESS.
Autor:
K. Strzalkowski, H.L. Glass
CdTe and CdZnTe (Cd 1– x Zn x Te) in bulk crystal form are used as X-ray and gamma-ray detectors, in electrooptic and photorefractive devices and as substrates for epitaxy, especially epitaxial HgCdTe for infrared detector arrays. Cd 1– x Zn x Te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef95b364e8d0da4b52e3f503eafe729e
https://doi.org/10.1016/b978-0-12-803581-8.02395-x
https://doi.org/10.1016/b978-0-12-803581-8.02395-x
Publikováno v:
Journal of Crystal Growth. 128:617-621
Microtwins in epitaxial (111)Te-face CdTe films grown by MOCVD on (0001) sapphire substrates can be detected by optical reflection from the as-grown surface, which is microscopically facetted, as well as by X-ray diffraction. Microtwin content can be
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Autor:
M. R. Appleby Woods, H.L. Glass
Publikováno v:
Applied Physics Letters. 60:2619-2621
X‐ray diffraction was used to measure microtwinning in (111) CdTe epitaxial films grown on (00⋅1) sapphire substrates by metalorganic chemical vapor deposition. The concentration of microtwins is high near the interface but drops off rapidly with
Autor:
H.L. Glass, F.S. Stearns
Publikováno v:
Materials Research Bulletin. 10:1255-1258
Single crystal films of the hexagonal ferrite Zn 2 Y, having the chemical formula Ba 2 Zn 2 Fe 12 O 22 , were grown by the isothermal dipping method of liquid phase epitaxy using a PbOBaOB 2 O 3 flux. The substrates were flux-grown M-type hexag
Publikováno v:
Applications of Surface Science. 9:299-314
Chemically-vapor-deposited (CVD), epitaxial, 0.15–0.40 μm thick silicon-on-sapphire (SOS) films have been melted and epitaxially regrown in the 1 ms time regime by means of a cw Ar laser. Analysis using MeV 4 He + Rutherford backscattering/channel
Autor:
H.L. Glass
Publikováno v:
Journal of Crystal Growth. 40:205-213
Films of yttrium iron garnet were grown on (111) gadolinium gallium garnet by liquid phase epitaxy from a PbO-B2O3 flux. Incorporation of Pb as a substitutional impurity produced an increase in film lattice parameter which resulted in initial compres
Publikováno v:
Materials Research Bulletin. 12:735-740
An impediment to the use of epitaxial YIG (yttrium iron garnet) in microwave devices has been the drift of the ferrimagnetic resonance field with temperature. This drift arises from the temperature sensitivity of the demagnetizing and anisotropy fiel
Autor:
H.L. Glass, F.S. Stearns
Publikováno v:
Materials Research Bulletin. 11:1319-1325
Using a PbOBaOB2O3 fluxed melt which had been employed previously to grow hexagonal ferrite Zn2Y films on hexagonal ferrite M substrates, isothermal dipping liquid phase epitaxy produced epitaxial films on non-magnetic spinel substrates. The su