Zobrazeno 1 - 10
of 104
pro vyhledávání: '"H.J. Levinstein"'
Publikováno v:
Proceedings of the IEEE. 71:640-656
In 1977, groups from diverse disciplines at Bell Labs were brought together for the first time, with the goal of applying a systems approach to high-performance NMOS technology. These groups, namely, solid-state physics, device design, materials, pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dadee9ae378893bae4172d0bc880a9f
https://doi.org/10.1109/proc.1983.12646
https://doi.org/10.1109/proc.1983.12646
Publikováno v:
Solid-State Electronics. 21:531-535
It is shown that the slow-trapping instability upon negative bias-temperature aging of MOS structures (poly-Si and Al-gate) can be significantly reduced by a high temperature (800–900°C) H 2 -anneal prior to Al metallization. Additional data are p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b6e67fc3f5da6299f258d1cc93a26c6
https://doi.org/10.1016/0038-1101(78)90023-0
https://doi.org/10.1016/0038-1101(78)90023-0
Publikováno v:
Journal of Physics and Chemistry of Solids. 27:1019-1026
The atomic arrangement of LiNbO 3 remains essentially unchanged from 24° to 1200°C, with the z -coordinate of oxygen ( z (O)) increasing from 0.0647 at 24°C to 0.0702 at 1200°C. It is proposed that at the Curie temperature (1210°C), z (O) become
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a8045e432ea696a6c20f989a7ccaf4c
https://doi.org/10.1016/0022-3697(66)90074-6
https://doi.org/10.1016/0022-3697(66)90074-6
Publikováno v:
Journal of Physics and Chemistry of Solids. 26:1111-1117
The range of stability and some properties of the A-15 phase in the V-Ga system were investigated. It was found that the A-15 phase forms at temperatures below 1100°C and exists over a composition range of approximately 3.5 V : Ga to 2.1 V : Ga at t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d66b2a30e8959d5132330fdf09a3f9ee
https://doi.org/10.1016/0022-3697(65)90006-5
https://doi.org/10.1016/0022-3697(65)90006-5
Publikováno v:
Journal of Applied Physics. 34:3603-3608
An etch‐pitting technique is described for revealing the points of intersection of dislocations with the (100) and (001) surfaces of calcium tungstate single crystals; each etch pit represents one dislocation. The dislocation configuration that is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a3c79e5de798a8df8c2fce956631c9
https://doi.org/10.1063/1.1729265
https://doi.org/10.1063/1.1729265
Publikováno v:
Journal of Physics and Chemistry of Solids. 27:983-988
Lithium niobate (LiNbO 3 ) is a material of considerable interest in view of its unusual ferroelectric, optical, acoustic and piezoelectric properties. The growth of large single crystals by the Czochralski and Bridgman-Stockbarger techniques is desc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34963dd9e542a21fd7a031b6d8cb39bf
https://doi.org/10.1016/0022-3697(66)90070-9
https://doi.org/10.1016/0022-3697(66)90070-9
Publikováno v:
Solid State Communications. 8:907-911
High temperature (A-15) superconductors have transition temperatures which are remarkably sensitive to interatomic spacings. This prediction, based on velocity of sound measurements and a thermodynamic theory, explains much of the ‘anomalous’ beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12504ce1e9635797e655ad2ccd0cb64e
https://doi.org/10.1016/0038-1098(70)90285-1
https://doi.org/10.1016/0038-1098(70)90285-1
Publikováno v:
Applied Physics Letters. 19:95-98
The effects of magnetic material parameter variations on the operating bias‐field and bubble diameter ranges of magnetic bubble devices are discussed theoretically. In addition, experimental measurements are reported of spatial variations observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceaeef5d85bb1a5b927c3168f83a22b1
https://doi.org/10.1063/1.1653850
https://doi.org/10.1063/1.1653850
Publikováno v:
Physical Review B. 3:107-112
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5340790fc77b71b35db0befecff6d186
https://doi.org/10.1103/physrevb.3.107
https://doi.org/10.1103/physrevb.3.107
Publikováno v:
IEEE Electron Device Letters. 3:90-92
The RC time constants for various interconnect materials, including poly-Si, silicides, and Al, are compared with MOSFET speeds at near-micron and submicron design rules. It is found that for design rules below ∼ 2 µm, the rise time of Al intercon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035b79b3db9f521c874c6fcdf98e2814
https://doi.org/10.1109/edl.1982.25491
https://doi.org/10.1109/edl.1982.25491