Zobrazeno 1 - 10
of 93
pro vyhledávání: '"H.J. Hovel"'
Autor:
H.J. Hovel
Publikováno v:
Solid-State Electronics. 47:1311-1333
A mercury-based “pseudo-MOSFET” is described which can be used to measure many electrical properties of the Si film in silicon-on-insulator (SOI) substrates, including the electron and hole mobilities, flat band and threshold voltages, BOX charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb924b60c2af6a13fc7069cc88fdee75
https://doi.org/10.1016/s0038-1101(03)00065-0
https://doi.org/10.1016/s0038-1101(03)00065-0
Autor:
Kathryn W. Guarini, Guy M. Cohen, H.J. Hovel, J. Benedict, C. Cabral, K. Petrarca, Diane C. Boyd, Raymond M. Sicina, J.H. Yoon, J. Newbury, P. Kozlowski, Paul M. Solomon, Hon-Sum Philip Wong, Christopher P. D'Emic, A. Krasnoperova, M. Ronay, K.K. Chan, V. Ku, O. Dokumaci, Christian Lavoie, Inna V. Babich, J.J. Bucchignano, E.C. Jones, J. Treichler, Y. Zhang
Publikováno v:
IEEE Circuits and Devices Magazine. 19:48-62
A planar self-aligned double-gate MOSFET process has been implemented where a unique sidewall source/drain structure (S/D) permits self-aligned patterning of the back-gate layer after the S/D structure is in place. This allows coupling the silicon th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76dcf51997d0234eec7ae42db2413164
https://doi.org/10.1109/mcd.2003.1175108
https://doi.org/10.1109/mcd.2003.1175108
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d61f6e1b3a7562680cfe1658e3fd203
https://doi.org/10.1109/movpe.1992.664998
https://doi.org/10.1109/movpe.1992.664998
Autor:
H.J. Hovel
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
Photoluminescence (PL) and photoreflectance (PR) intensity maps of silicon-on-insulator (SOI) wafers tend to reveal much more than bare silicon. They are often rich in features due to both reflectance variations arising from the optical properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b51eba928db7bc90f97dd34e46c64b3
https://doi.org/10.1109/soi.1993.344607
https://doi.org/10.1109/soi.1993.344607
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
In this paper, the outlook for the SOI technology in the sub-0.25 /spl mu/m CMOS regime is discussed. The key challenges and opportunities for the SOI technology to become a main stream semiconductor technology are presented. >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2d0cd1fe1bdfccf3971f041ef972a0
https://doi.org/10.1109/soi.1993.344614
https://doi.org/10.1109/soi.1993.344614
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
Silicon-on-insulator (SOI) is very promising for submicron CMOS due to low parasitic capacitance, higher potential speed, and ease of isolation. The major requirements for the starting material are: 1) thin Si layers, 2) low active defect densities,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39288025246eee2264688026532f0bcf
https://doi.org/10.1109/soi.1993.344602
https://doi.org/10.1109/soi.1993.344602
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
It is well established that CMOS SOI technology provides improved device and circuit performance compared to bulk silicon. Extremely fast ring oscillators with delay time as low as 20 ps at 1.5 V and operating at room temperature have been demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fdb285f90b627f707ad9be4493d5e61
https://doi.org/10.1109/soi.1993.344610
https://doi.org/10.1109/soi.1993.344610
Autor:
H.J. Hovel
Publikováno v:
1996 IEEE International SOI Conference Proceedings.
The task in SOI substrate material is now to establish that high performance and reliability can be obtained routinely and consistently, in spite of the fact that SOI wafers are still made in a small batch processes. Circuits of interest must be obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc3a57c9dccbbbfcec1e553d5da92e2f
https://doi.org/10.1109/soi.1996.552465
https://doi.org/10.1109/soi.1996.552465
Autor:
J.Y.-C. Sun, Stephan A. Cohen, H.J. Hovel, Y.-J. Mii, D. K. Sadana, Yuan Taur, Christopher P. D'Emic, K.K. Chan
Publikováno v:
Proceedings. IEEE International SOI Conference.
We present the first comparison of 0.25 /spl mu/m nMOSFET devices fabricated on SOS, SIMOX and BSOI substrates with a fully depleted (FD) device design for low power analog and digital applications. All the substrates were processed nearly identicall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e419539bbeb49b7a7d0539c61bba3a14
https://doi.org/10.1109/soi.1994.514202
https://doi.org/10.1109/soi.1994.514202
Publikováno v:
Proceedings. IEEE International SOI Conference.
Two new classes of defects have been identified in commercial SIMOX, plasma thinned BSOI and BESOI materials. The first class of defects are revealed when the materials are treated in concentrated HF, and their density is in the range 10/sup 2/-10/su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e272a469a59f19540088e4b70469729
https://doi.org/10.1109/soi.1994.514271
https://doi.org/10.1109/soi.1994.514271