Zobrazeno 1 - 10
of 26
pro vyhledávání: '"H.J. Geipel"'
Autor:
A.G. Fortino, H.J. Geipel
Publikováno v:
IEEE Journal of Solid-State Circuits. 14:430-435
An empirically based process modeling system is discussed for determining ion-implant conditions used to achieve specific IGFET thresholds. Experimental techniques are applied to insure consistency between physical process phenomenon and the numerica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70c14d38acf028949779532e2cc47875
https://doi.org/10.1109/jssc.1979.1051194
https://doi.org/10.1109/jssc.1979.1051194
Publikováno v:
IEEE Transactions on Electron Devices. 27:1417-1424
A potentially severe limit on density, performance, and wirability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d486aa4e9c10daeffac2fe8e49e27063
https://doi.org/10.1109/t-ed.1980.20050
https://doi.org/10.1109/t-ed.1980.20050
Publikováno v:
IEEE Journal of Solid-State Circuits. 15:482-489
A potentially severe limit on density, performance, and virability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1156659a8c7bb9809031ab0a2a10f424
https://doi.org/10.1109/jssc.1980.1051426
https://doi.org/10.1109/jssc.1980.1051426
Publikováno v:
IEEE Transactions on Nuclear Science. 20:144-148
The performance of complementary (n+pp+) silicon TRAPATT diodes has been measured under transient ionizing radiation conditions in both evacuated and airfilled coaxial cavities. Twenty-five watt pulsed, 2.5 GHz oscillators were exposed to 100 nanosec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::966c23358b14c49f899dfef065cb7b02
https://doi.org/10.1109/tns.1973.4327385
https://doi.org/10.1109/tns.1973.4327385
Publikováno v:
IEEE Electron Device Letters. 5:166-168
Polycides, composite wiring/electrode films formed by depositing a refractory metal silicide such as WSi 2 , MoSi 2 , or TaSi 2 atop a polysilicon film [1]-[4], are finding their way into IC technologies as low-resistivity electrodes/interconnects. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aecb86555f5f09cb0cf567d2a60a6d27
https://doi.org/10.1109/edl.1984.25871
https://doi.org/10.1109/edl.1984.25871
Autor:
H.J. Geipel, Louis Carl Parrillo
Publikováno v:
1981 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4f917f073192ad38436ae6f275082e8
https://doi.org/10.1109/iedm.1981.190137
https://doi.org/10.1109/iedm.1981.190137
Autor:
H.J. Geipel
Publikováno v:
1980 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa002e58f341cae086f2cd5ba89e1847
https://doi.org/10.1109/iedm.1980.189945
https://doi.org/10.1109/iedm.1980.189945
Autor:
H.J. Geipel
Publikováno v:
1984 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca0ab6fc2cca28106bead91c0aa380ef
https://doi.org/10.1109/iedm.1984.190626
https://doi.org/10.1109/iedm.1984.190626
Autor:
L.C. Parrillo, H.J. Geipel
Publikováno v:
1981 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9ebff1671f9002aa27d0c843dd0966
https://doi.org/10.1109/iedm.1981.190048
https://doi.org/10.1109/iedm.1981.190048
Publikováno v:
Electronics Letters. 10:277
The effect of externally enhanced leakage current on S band TRAPATT diodes is reported. Without enhanced leakage, the TRAPATT has an effective leakage current density of the order of 0·4 A/cm2. Calculations indicate that the leakage current due to c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a23846e523ab8abef699c7b23d419a3
https://doi.org/10.1049/el:19740220
https://doi.org/10.1049/el:19740220