Zobrazeno 1 - 10
of 82
pro vyhledávání: '"H.H. Kuo"'
Publikováno v:
Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Annual International Conference. 2022
Quantitative biomarkers of infant motion may be predictive of the development of movement disorders. This study presents and validates a low cost, markerless motion tracking method for the estimation of upper body kinematics of infants from which pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d11bf3f4cb258e263a64bf76207cfe78
https://pubmed.ncbi.nlm.nih.gov/36085706
https://pubmed.ncbi.nlm.nih.gov/36085706
Autor:
D. Balta, H.H. Kuo, J. Wang, I.G. Porco, M.M. Schladen, A. Cereatti, P.S. Lum, U. Della Croce
Publikováno v:
Gait & Posture. 97:32-33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::744e535b8cd785758c8ba9ee2e318ed4
https://doi.org/10.1016/j.gaitpost.2022.09.055
https://doi.org/10.1016/j.gaitpost.2022.09.055
Publikováno v:
Carbon. 43:229-239
The effect of carbonization rate in a wide range (1, 100 and 1000 °C/min) on the properties of a PAN/phenolic-based carbon/carbon (C/C) composite was studied. The results indicated that the composite processed at a higher carbonization rate had a hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a4ab0190b49c9b4c6d91a2454f10b18
https://doi.org/10.1016/j.carbon.2004.08.024
https://doi.org/10.1016/j.carbon.2004.08.024
Publikováno v:
Sensors and Actuators B: Chemical. 84:258-264
Al-doped ZnO films were deposited onto SiO 2 /Si substrates by rf magnetron sputtering system as a CO gas sensor. The dependence of the thin film thickness on CO gas sensing properties was investigated, where the film thickness was varied by controll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::399e9425166a9900b98a7bb32191d708
https://doi.org/10.1016/s0925-4005(02)00034-5
https://doi.org/10.1016/s0925-4005(02)00034-5
Publikováno v:
Materials Chemistry and Physics. 57:244-252
This work studied the braking (simulated-stop) behavior of a PAN-CVI-based carbon–carbon composite under different surface conditions. The results indicate that, under the same braking condition, the broken-in (BI) composite exhibited a higher fric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a10399a6f116510f17bcfb566b7bdeb8
https://doi.org/10.1016/s0254-0584(98)00231-4
https://doi.org/10.1016/s0254-0584(98)00231-4
Publikováno v:
2006 International Interconnect Technology Conference.
The process integration of novel Cu CMP's barrier slurry for the 45nm-node non-capped ultra low-k (ULK, k < 2.5) technology is reported. The slurry, based on a 'self-stop' concept, was designed to mitigate the impact of ULK damage, such as unexpected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7285f2bed2b98c35807e16c96615aac9
https://doi.org/10.1109/iitc.2006.1648669
https://doi.org/10.1109/iitc.2006.1648669
Publikováno v:
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
A hybrid dual damascene interconnect approach with organic ultra-low-k for gap filling has been demonstrated. The traditional PR approach with via-first process for dual damascene suffers from ashing damage for CVD ultra-low-k. Our approach is able t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c0ee2c374ec309523073bf66344c88
https://doi.org/10.1109/ipfa.2004.1345544
https://doi.org/10.1109/ipfa.2004.1345544
Autor:
T.C. Tseng, H.H. Kuo, J.Y. Song, Mong-Song Liang, S.M. Jang, K.C. Lin, S.N. Lee, Yen-Huei Chen, C.J. Chuang, W.C. Chiou
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
Novel slurries were developed for Cu, TaN, and dielectric chemical mechanical polish (CMP) to greatly enhance the planarity of Cu dual damascene interconnect (DDI). Compared with conventional alumina-based slurries, the newly designed polymer-based s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b16a204b7beb6310b159ca8524fe3ef
https://doi.org/10.1109/vlsit.2003.1221116
https://doi.org/10.1109/vlsit.2003.1221116
Autor:
J.Y. Pan, Caleb Yu-Sheng Cho, Jung-Chang Lu, A. Hsu, Chi-Wei Hung, H.H. Kuo, Da Sung, C.L. Chen, Vincent Huang, P. Tuntasood, Der-Tsyr Fan, I.C. Chuang, Chi-Shan Wu, Cheng-Yuan Hsu, B. Sheen, C.C. Hsue, K. Tseng, S.C. Chen, Chiou-Feng Chen
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
For the first time, split-gate NAND flash memory featuring interpoly erase and mid-channel programming is demonstrated at 120nm technology node. The cell array operates at single polarity voltages lower than 12V. Erase and programming can be accompli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::114d362957e69dd2b13b8c0b142ab45b
https://doi.org/10.1109/vlsit.2004.1345403
https://doi.org/10.1109/vlsit.2004.1345403
Conference
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