Zobrazeno 1 - 10
of 367
pro vyhledávání: '"H.E. Maes"'
Autor:
A. Shickova, Philippe Absil, E. San Andrés, R. Degraeve, D. Klenov, E Simoen, H.E. Maes, Guido Groeseneken, Peter Verheyen, B. Kaczer, P. Favia, Geert Eneman, M. Jurczak
Publikováno v:
IEEE Transactions on Electron Devices. 55:3432-3441
To assess the impact of strain on negative bias temperature instability (NBTI), systematic studies were performed on devices with polycrystalline-Si/SiON as well as deposited metal gate/high-kappa and FUSI/high-kappa gate stacks. The effects of compr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60fb51fe314a1d490c96739d4df68d22
https://doi.org/10.1109/ted.2008.2006919
https://doi.org/10.1109/ted.2008.2006919
Electrical Characterization of Leaky Charge-Trapping High-$\kappa$ MOS Devices Using Pulsed $Q$– $V$
Publikováno v:
IEEE Electron Device Letters. 28:436-439
A pulsed Q-V method enabling charge or capacitance measurements versus gate voltage of aggressively scaled, leaky (up to ~10 A/cm2 ), and charge-trapping high-kappa MOS devices is introduced. The method does not require RF structures and can be used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f2353591184577bd2dc3eaf0dd7c2f9
https://doi.org/10.1109/led.2007.895431
https://doi.org/10.1109/led.2007.895431
Autor:
Lionel Trojman, Maarten Rosmeulen, S. De Gendt, H.E. Maes, L.-A. Ragnarsson, V. Kaushik, M.M. Heyns, Guido Groeseneken, Barry O'Sullivan
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54 (3), pp.497-503. ⟨10.1109/TED.2006.890230⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54 (3), pp.497-503. ⟨10.1109/TED.2006.890230⟩
The effects of source/drain activation thermal budget and premetallization degas conditions on interfacial regrowth, carrier mobility, and defect densities are examined for SiO2/HfO2/TaN stacks. We observe a correlation between the mobility degradati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1635eaabe6ef89935e51df8e263b842
https://doi.org/10.1109/ted.2006.890230
https://doi.org/10.1109/ted.2006.890230
Autor:
Philippe Roussel, Guido Groeseneken, A. Kerber, Robin Degraeve, H.E. Maes, Luigi Pantisano, Thomas Kauerauf, Eduard A. Cartier, Udo Schwalke
Publikováno v:
IEEE Transactions on Electron Devices. 50:1261-1269
A detailed study on charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes has been carried out. Due to the inherent asymmetry of the dual layer stack all electrical properties studied were found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a5aa0cd92fb5969fad2a9e1a94d6dc
https://doi.org/10.1109/ted.2003.813486
https://doi.org/10.1109/ted.2003.813486
Publikováno v:
VLSI Design, Vol 13, Iss 1-4, Pp 459-463 (2001)
A careful calibration of a continuum process simulator is normally required to achieve a good agreement between simulated results and experimental dopant profiles. However, the validity of such a calibration procedure is often limited to a particular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62902675d2e9cc36dda93445b5beb745
https://doaj.org/article/2c7441c5c68f4be8a56fa2ed122fa485
https://doaj.org/article/2c7441c5c68f4be8a56fa2ed122fa485
Autor:
L. Haspeslagh, H.E. Maes, J. Van Houdt, Paul Hendrickx, Dirk Wellekens, L. Deferm, J. Tsouhlarakis
Publikováno v:
IEEE Transactions on Electron Devices. 47:2153-2160
In this paper, the performance and reliability characteristics of the 0.35 /spl mu/m/0.25 /spl mu/m High Injection MOS (HIMIOS(R)) technology is described in detail. This flash EEPROM technology relies on source-side injection for programming and Fow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26ec44b13a0fab265bdf57d6d8c26b42
https://doi.org/10.1109/16.877178
https://doi.org/10.1109/16.877178
Autor:
Ben Kaczer, B. De Jaeger, M. Meuris, H.E. Maes, Tibor Grasser, Guido Groeseneken, Koen Martens
Publikováno v:
IEEE Electron Device Letters. 29:1364-1366
In this letter, the charge-pumping (CP) technique is validated for germanium MOSFETs. Effects of the smaller Ge bandgap on CP are discussed through both experiments and simulations. The standard CP setup with ~ 100-ns transition times at room tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2817343d8873f1efce3aa0397a8fa86d
https://doi.org/10.1109/led.2008.2007582
https://doi.org/10.1109/led.2008.2007582
Autor:
Thierry Conard, M.M. Heyns, Michel Houssa, Wim Deweerd, J.W. Maes, S. De Gendt, Marc Aoulaiche, Lionel Trojman, H.E. Maes, Guido Groeseneken
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, 2007, 28 (7), pp.613-615. ⟨10.1109/LED.2007.899435⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2007, 28 (7), pp.613-615. ⟨10.1109/LED.2007.899435⟩
IEEE Electron Device Letters, 2007, 28 (7), pp.613-615. ⟨10.1109/LED.2007.899435⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2007, 28 (7), pp.613-615. ⟨10.1109/LED.2007.899435⟩
Performance and negative-bias temperature instability (NBTI) on atomic-layer-deposited HfSiON metal-gated pMOSFETs are investigated. The impact of nitrogen incorporation either with plasma nitridation or NH3 anneal is studied and compared to the nonn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a180530c03640dbe15fe0be03fd9affe
https://doi.org/10.1109/led.2007.899435
https://doi.org/10.1109/led.2007.899435
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1090-1095
This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be949b8c64b3f48ffd96c18cd73d4544
https://doi.org/10.1109/4.701269
https://doi.org/10.1109/4.701269
Publikováno v:
Journal of Applied Physics. 83:4724-4733
Critical thickness hc has been calculated for capped and uncapped lattice mismatched II–VI semiconductor epilayers. Both the old equilibrium theory and the improved theory have been used. The calculated values are compared with the experimental dat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f8706f21886f8996a97258d8f511d3b
https://doi.org/10.1063/1.367261
https://doi.org/10.1063/1.367261