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pro vyhledávání: '"H.C. Yen"'
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Publikováno v:
Journal of Physics A: Mathematical and General. 28:165-177
We study the supersymmetric Gelfand-Dickey algebras associated with the superpseudodifferential operators of positive as well as negative leading order. We show that, upon the usual constraint, these algebras contain the N=2 super Virasoro algebra as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::694a0db3cca16362e47e7c666339e45e
https://doi.org/10.1088/0305-4470/28/1/019
https://doi.org/10.1088/0305-4470/28/1/019
Autor:
L. Kehias, T. Jenkins, W. Okamura, E. Kaneshiro, R. Worley, R. Welch, Tony Quach, Augusto Gutierrez-Aitken, Aaron K. Oki, P. Watson, H.C. Yen
Publikováno v:
IEEE Microwave and Wireless Components Letters. 11:361-363
InP single heterojunction bipolar transistors have previously demonstrated 5-10 dB lower third-order intermodulation products (IM3) compared to GaAs heterojunction bipolar transistors (HBTs) under low voltage (2 V) operation. This paper reports excel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8a01285fda7a0b9d6ff53b8ccdfeb86
https://doi.org/10.1109/7260.950761
https://doi.org/10.1109/7260.950761
Publikováno v:
IEEE Microwave and Guided Wave Letters. 8:342-344
We have developed a new empirical model to represent the current-voltage (I-V) characteristics of HEMT devices. This model is simple and yet capable of representing the HEMT I-V characteristics with high accuracy. Excellent modeling of the measured d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::945eae88f9e543f0be282d7c6428f58d
https://doi.org/10.1109/75.735415
https://doi.org/10.1109/75.735415
Autor:
H.C. Yen, D.C. Streit, Richard Lai, Michael E. Barsky, R. Grunbacher, Y.C. Chen, D.L. Ingram, T.R. Block
Publikováno v:
IEEE Microwave and Guided Wave Letters. 8:399-401
We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeter-wave high-power applications. A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-/spl mu/m gate length and 1.28-mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d93e9e5c1c7607cbdffab24da007256
https://doi.org/10.1109/75.736259
https://doi.org/10.1109/75.736259
Autor:
Richard Lai, T.-W. Huang, W. Jones, K. Stamper, P.H. Liu, T.R. Block, D.C. Streit, R.M. Dia, Huei Wang, H.C. Yen, P. Huang, E.W. Lin, Y.C. Chen
Publikováno v:
IEEE Microwave and Guided Wave Letters. 7:133-135
We have developed W-band high-power monolithic microwave integrated circuit (MMIC) amplifiers using passivated 0.15 /spl mu/m gate length InGaAs/InAlAs/InP HEMT's. A 640 /spl mu/m single-stage MMIC amplifier demonstrated an output power of 130 mW wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cbdc0e4e6a6490de5d87c46e88d289a
https://doi.org/10.1109/75.569728
https://doi.org/10.1109/75.569728
Autor:
T.-W. Huang, Huei Wang, A.K. Oki, Richard Lai, Y.C. Chen, P.H. Liu, Kevin W. Kobayashi, Liem T. Tran, T.R. Block, J. Cowles, H.C. Yen, D.C. Streit
Publikováno v:
IEEE Microwave and Guided Wave Letters. 7:222-224
This paper presents the results of the first W-band InP-based high electron mobility transistor-heterojunction bipolar transistor (HEMT-HBT) monolithic microwave integrated circuit (MMIC). The InP-based HBT and HEMT devices are monolithically integra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be64fb6b214489127b132ab832aabe6e
https://doi.org/10.1109/75.605484
https://doi.org/10.1109/75.605484
Autor:
Huei Wang, E.W. Lin, H.C. Yen, T.R. Block, R.M. Dia, D.C. Streit, Richard Lai, Geok Ing Ng, M. Biedenbender, P.H. Liu, D.C.W. Lo
Publikováno v:
IEEE Microwave and Guided Wave Letters. 6:366-368
We report high efficiency W-band power monolithic microwave integrated circuits (MMIC's) using passivated 0.15 /spl mu/m gate length In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP HEMTs. A 0.15 /spl mu/m/spl times/320 /spl mu/m single stag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76286243245da44723dee5cc1966a504
https://doi.org/10.1109/75.536947
https://doi.org/10.1109/75.536947
Autor:
Dwight C. Streit, H.C. Yen, Li Yang, T.R. Block, E. Kaneshiro, F.M. Yamada, A. Gutierrez-Aitken, Kevin W. Kobayashi, Aaron K. Oki
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
This paper describes the first InAlAs/InGaAs-InP HBT MMIC power amplifier results reported for frequencies above 20 GHz. The MMIC amplifier employs a unique oval emitter array (OEA) device and a 1000 nm thick collector epitaxy in order to improve the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83adaf0da7246ea04d58a782ff17007
https://doi.org/10.1109/iedm.1999.824181
https://doi.org/10.1109/iedm.1999.824181
Autor:
L.W. Yang, K.W. Kobayashi, D.C. Steit, A.K. Oki, H.C. Yen, P.C. Grossman, T.R. Block, L.T. Tran, A. Gutierrez-Aitken, L.G. Callejo, J. Macek, S. Maas
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
We report the first InP HBT MMIC power amplifier chip results at K-band. A 21 GHz fully monolithic 2 mil InP HBT power MMIC which achieves 62.8% PAE with 10 dB gain and 20 dBm output power. A higher power MMIC at 18.5 GHz achieved 25 dBm output power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a034827aa9b32d9f74cf3810b01f3629
https://doi.org/10.1109/gaas.1999.803730
https://doi.org/10.1109/gaas.1999.803730