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pro vyhledávání: '"H.C. Duran"'
Akademický článek
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Publikováno v:
Microelectronic Engineering. 35:67-70
Post-RIE cleaning processes after the dry gate recess etching step of lattice-matched InGaAs/InAlAs/InP-HEMTs using an oxygen plasma treatment of the surface followed by various wet chemical steps have been investigated. The treated surfaces have bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14f61dd76a4bbee190bbd934da5bbdf
https://doi.org/10.1016/s0167-9317(96)00150-5
https://doi.org/10.1016/s0167-9317(96)00150-5
Akademický článek
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Publikováno v:
IEEE Electron Device Letters. 17:482-484
Lattice-matched InAlAs-InGaAs HEMTs with dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The highly selective dry etching process ensures uniform device parameters. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e4a37b0ce1e9e01193baa5181d86b5
https://doi.org/10.1109/55.537082
https://doi.org/10.1109/55.537082
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
In this paper, a technology for the fabrication of high performance InP-based HEMTs using dry gate recess etching is reported. The dry etched devices show better uniformity and considerably reduced low-frequency noise compared to conventionally wet e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62da277f92c530ab6268bcfaf7b50cca
https://doi.org/10.1109/iciprm.1999.773699
https://doi.org/10.1109/iciprm.1999.773699
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
InGaAs/InP double heterostructure bipolar transistors (HBTs) with small-signal current gains /spl beta/ of 90 and breakdown voltages BV/sub CEO/ in excess of 20 V are reported. Respective f/sub t/ and f/sub max/ values of 32 and 25 GHz were obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9517de376132ba409c16d143d813cfa
https://doi.org/10.1109/iciprm.1993.380558
https://doi.org/10.1109/iciprm.1993.380558
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The modelling of the noise source parameters shows only minor diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a373367ef953bafbfc49b460402e07f7
https://doi.org/10.1109/iciprm.1996.492260
https://doi.org/10.1109/iciprm.1996.492260
Publikováno v:
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
A DRO operating in the frequency range of 23.2-24.8 GHz was designed using InGaAs-InAlAs-InP HEMTs with dry and wet etched gate recess. The oscillator consisted of an MMIC in coplanar waveguide technology and an externally coupled mechanically tunabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e71ef12dcf6297f5ed8ecd9ce25a7c
https://doi.org/10.1109/mwsym.1998.705126
https://doi.org/10.1109/mwsym.1998.705126
Publikováno v:
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH/sub 4//H/sub 2/ RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76629b76d8f123efb901923247e0e112
https://doi.org/10.1109/iscs.1998.711650
https://doi.org/10.1109/iscs.1998.711650
Akademický článek
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