Zobrazeno 1 - 10
of 85
pro vyhledávání: '"H.C. Chou"'
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Publikováno v:
Microelectronics Reliability. 45:1003-1006
The electrical conduction of metal–PZT–metal thin-film capacitors depends on the electrode material due to the different magnitudes of the work functions. In this work, Au/PZT/Pt and Pt/PZT/Pt capacitors were fabricated and their electrical prope
Autor:
S.R. Stock, S. Kamra, Nan Marie Jokerst, H.C. Chou, S.L. Lowrie, Ajeet Rohatgi, R.K. Ahrenkiel, D.H. Levi
Publikováno v:
Materials Chemistry and Physics. 43:178-182
CdTe solar cells were fabricated by depositing MOCVD grown CdTe films on CdS/SnO2/glass substrates with varying Te:Cd mole ratios in the growth ambient. Cells grown in Te-rich ambient showed increased atomic interdiffusion at the CdS/CdTe interface a
Publikováno v:
Neuroscience. 67:763-775
The distribution of tubulin, microtubule-associated protein 2 and Tau in the spinal cords of bullfrog tadpoles during development and after transection was studied. α-Tubulin or β-tubulin immunoreactivity was present in the axons, neuronal perikary
Publikováno v:
Journal of Electronic Materials. 23:681-686
An attempt is made to understand, quantify, and reduce the reflectance and photocurrent loss in CdTe solar cells. Model calculations are performed to determine the optimum thicknesses of CdS and SnO2 films and anti-reflection (AR) coating on glass th
Publikováno v:
Comparative Biochemistry and Physiology Part C: Pharmacology, Toxicology and Endocrinology. 107:305-311
The effects of memantine, an anticonvulsant, on (1) postsynaptic currents (PSC), (2) the responses to microperfused acetylcholine (ACh) and (3) Ca-currents were studied at voltage-clamped identified Lp10 neuron of Achatina fulica. Memantine (5.58 μM
Autor:
H.C Chou, J.P. Sadler
Publikováno v:
Mechanism and Machine Theory. 28:145-158
Insufficient actuator torque or force can severely restrict the applications and performance of an industrial robot. Increasing actuator capacity has drawbacks including increased weight and power requirements. This paper proposes an alternative appr
Publikováno v:
2007 ROCS Workshop[Reliability of Compound Semiconductors Digest].
MHEMT technology using metamorphic buffer layers growing on GaAs substrate can overcome InP substrate issues. Several researchers have demonstrated reliable MHEMT devices, mainly with the drain bias at 1 V. This work, however, demonstrated for the fi
Publikováno v:
[Reliability of Compound Semiconductors] ROCS Workshop 2006.
ESD is a well-known reliability aspect in Si technologies, but GaAs devices are more susceptible to ESD damage than the silicon devices. In this study, the ESD survivability of the InGaP HBT transistors and the B-C, B-E/C and BE protect diodes was ev
Publikováno v:
[Reliability of Compound Semiconductors] ROCS Workshop, 2005..