Zobrazeno 1 - 10
of 35
pro vyhledávání: '"H.-O. Vickes"'
Autor:
Mattias Ferndahl, H.-O. Vickes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:53-60
In this paper the analysis and design of a new active balun with very broadband performance, the matrix balun, are reported. Measured results show a common mode rejection ratio, CMRR, larger than 15 dB between 4 and 42 GHz while exhibiting 2 dB singl
Autor:
Christian Fager, Mattias Ferndahl, Herbert Zirath, Peter Linner, H.-O. Vickes, Kristoffer Andersson
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:2692-2700
A general equivalent-circuit-based method for the de-embedding of scattering parameters is presented. An equivalent circuit representation is used to model the embedding package. The parameters in the models are estimated with a statistical method us
Publikováno v:
IEEE Microwave and Wireless Components Letters. 13:523-525
We report, for the first time, the experimental evaluation of a very short channel 90-nm CMOS transistor under RF over-voltage conditions. At 9 GHz and 1.5 V supply a 40 /spl mu/m gate width device is able to deliver 370 mW/mm output power with a PAE
Autor:
H.-O. Vickes, Mattias Ferndahl
Publikováno v:
2011 IEEE MTT-S International Microwave Symposium.
Summary form only given, as follows. In this paper, we present a new active combining balun, the combiner matrix balun, i.e. differential input to single-ended output, with broadband performance. Measured results show an amplitude and phase differenc
Autor:
Mattias Ferndahl, H.-O. Vickes
Publikováno v:
2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits.
Large signal measurements of an active transistor based balun using an Large Signal Netork Analyzer (LSNA) have been performed to study the phase and amplitude imbalance as a function of input power and frequency. The LSNA measurements are compared a
Autor:
H.-O. Vickes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:1383-1390
A novel approach for analyzing the high-frequency performance of compound semiconductor FETs is presented. The approach is based on a circuit description that separates intrinsic and parasitic circuit elements of active devices in a general way. Maso
Autor:
H.-O. Vickes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:363-366
A technique useful in extracting intrinsic parameters for a compound semiconductor FET is presented. The technique makes use of a method provided by G. Dambrine et al. (1988). A modified active circuit that accounts for charge accumulation in the con
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:216-223
A new computer-controlled programmable load is presented. The load consists of a cascade of p-i-n diodes bonded to each other. The capacitance of the reverse-biased p-i-n diode, together with the interconnecting bonding wires, forms an artificial tra
Publikováno v:
2006 Asia-Pacific Microwave Conference.
Recent results on characterization, modelling and circuit design based on 90/130 nm CMOS is presented in this paper. Amplifiers, frequency multipliers, and mixers were realized for frequencies up to 60 GHz. Circuit results based on two different tran
Autor:
Spartak Gevorgian, Herbert Zirath, A. Masud, Iltcho Angelov, H.-O. Vickes, B.M. Motlagh, Mattias Ferndahl, F. Ingvarsson
Publikováno v:
15th International Conference on Microwaves, Radar and Wireless Communications (IEEE Cat. No.04EX824).
Recent results on MMIC based on a 90-nm CMOS process are presented. Linear and nonlinear models were developed for the transistors based on S-parameters, noise parameters, and power spectrum measurements. Based on EM-simulations, models for multilaye