Zobrazeno 1 - 10
of 163
pro vyhledávání: '"H.-M. Rein"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:1974-1980
A low-power FMCW 80 GHz radar transmitter front-end chip is presented, which was fabricated in a SiGe bipolar production technology ( fT=180 GHz, fmax=250 GHz ). Additionally to the fundamental 80 GHz VCO, a 4:1-frequency divider (up to 100 GHz), a 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78b0e2a2d303d49e55d97902423980c5
https://doi.org/10.1109/jssc.2012.2201272
https://doi.org/10.1109/jssc.2012.2201272
Autor:
J. Jewell, Christian W. Baks, A. Schild, Richard A. John, Christian Schuster, Dennis L. Rogers, Jeremy D. Schaub, C. Haymes, Daniel M. Kuchta, Mark B. Ritter, Petar Pepeljugoski, K. Schrodinger, D. Kucharski, Young H. Kwark, L. Shan, L. Graham, H.-M. Rein
Publikováno v:
Journal of Lightwave Technology. 22:2200-2212
A 120-Gb/s optical link (12 channels at 10 Gb/s/ch for both a transmitter and a receiver) has been demonstrated. The link operated at a bit-error rate of less than 10/sup -12/ with all channels operating and with a total fiber length of 316 m, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b05322d5d3a3bc904eafb36e33705411
https://doi.org/10.1109/jlt.2004.833255
https://doi.org/10.1109/jlt.2004.833255
Autor:
M. Kardos, J. Mullrich, Joseph F. Jensen, William E. Stanchina, H. Thurner, E. Mullner, H.-M. Rein
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1260-1265
A monolithic integrated transimpedance amplifier for the receiver in a 40-Gb/s optical-fiber TDM system has been fabricated in an InP-based HBT technology. Despite its high gain (transimpedance of 2 k/spl Omega/ in the limiting mode, 10 k/spl Omega/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855737a008345dd8eb8fd76131767acf
https://doi.org/10.1109/4.868033
https://doi.org/10.1109/4.868033
Autor:
H.-M. Rein, M. Friedrich
Publikováno v:
IEEE Transactions on Electron Devices. 46:1394-1401
For pt. I, see ibid., vol. 46, no. 7, p. 1384-93 (1999). The current-voltage relations derived in the first part of the paper for an idealized SiGe HBT are now checked for transistors with more practical doping profiles: nonabrupt pn junctions, Ge gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c411c20a1931c9b7ceebe6b93dd6053
https://doi.org/10.1109/16.772481
https://doi.org/10.1109/16.772481
Publikováno v:
IEEE Microwave and Wireless Components Letters. 13:425-427
Multipurpose VCOs with wide tuning range and oscillation frequencies up to 74 GHz (on wafer) and 69 GHz (mounted chip, with output buffer), respectively, have been fully integrated in a commercial SiGe production technology. To the best of the author
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ea84580f8fbd4ff71d8fef639022b1d
https://doi.org/10.1109/lmwc.2003.818520
https://doi.org/10.1109/lmwc.2003.818520
Publikováno v:
IEEE Microwave and Wireless Components Letters. 12:79-81
A low-phase-noise and low-cost millimeter-wave voltage-controlled oscillator (VCO) has been fully integrated in commercial SiGe bipolar technologies. By varying the bias voltage of the on-chip varactor, the frequency can be continuously tuned from 43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a050a29c4ca9991f35aaa7eb0db58d2
https://doi.org/10.1109/7260.989857
https://doi.org/10.1109/7260.989857
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:1759-1762
The authors present a simple theory which makes it possible to calculate the frequency ranges of stable operation for a regenerative divider employing a double balanced mixer in large-signal operation. The validity of the derived formulas is tested b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e25bbfd66e1b744eb24d2ee4f784393
https://doi.org/10.1109/22.88548
https://doi.org/10.1109/22.88548
Autor:
H.-M. Rein
Publikováno v:
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c66ca65cb902ce76355c160c45de3be
https://doi.org/10.1109/leosst.1995.764143
https://doi.org/10.1109/leosst.1995.764143
Autor:
R. Reimann, H.-M. Rein
Publikováno v:
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A 4:1 multiplexer, composed of three 2:1 multiplexers, operating up to 5.5Gb/s will be reported. To attain this speed, internal voltage swings were limited to 0.4V differential, and a fast output buffer was employed. An IC was fabricated in a 2μm ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f13029286f0771e9964d30187acb23b7
https://doi.org/10.1109/isscc.1986.1156886
https://doi.org/10.1109/isscc.1986.1156886
Autor:
R. Reimann, H.-M. Rein
Publikováno v:
1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
This paper will cover a limiting amplifier with 54dB gain obtained by using a cascase of 3 differential gain stages. A 400mV output with low jitter at 4GHz has resulted for inputs ranging from 2.5mV-400mV. The amplifier was fabricated in a 2μm bipol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92b793ac08ba8a64e7c7aeb7caca776e
https://doi.org/10.1109/isscc.1987.1157093
https://doi.org/10.1109/isscc.1987.1157093