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pro vyhledávání: '"H.-K. Lin"'
Effects of Accumulated Energy on Nanoparticle Formation in Pulsed-Laser Dewetting of AgCu Thin Films
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-11 (2021)
Abstract Ag50Cu50 films were deposited on glass substrates by a sputtering system. Effects of accumulated energy on nanoparticle formation in pulse-laser dewetting of AgCu films were investigated. The results showed that the properties of the dewette
Externí odkaz:
https://doaj.org/article/cdda15efd6c54270be981e27ce2bf06b
Publikováno v:
BMC Chemistry, Vol 13, Iss 1, Pp 1-6 (2019)
Abstract AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002)
Externí odkaz:
https://doaj.org/article/ca60b2ea40ce4032865b30737c05a2a4
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Publikováno v:
BMC Chemistry, Vol 13, Iss 1, Pp 1-6 (2019)
BMC Chemistry
BMC Chemistry
AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak inte
Effects of Accumulated Energy on Nanoparticle Formation in Pulsed-Laser Dewetting of AgCu Thin Films
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-11 (2021)
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-11 (2021)
Ag50Cu50 films were deposited on glass substrates by a sputtering system. Effects of accumulated energy on nanoparticle formation in pulse-laser dewetting of AgCu films were investigated. The results showed that the properties of the dewetted films w
Silver particles are prepared by dewetting Ag films coated on glass using a fiber laser. The size of the particles is controlled in the range of 92 nm ~ 1.2 μm by adjusting the thickness of the Ag film. The structural properties and surface roughne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::552307b3cd21b8063f90c7a7034cf17a
Publikováno v:
Crystal Growth & Design. 18:2518-2524
Twinning is an important phenomenon during crystal growth of multicrystalline silicon. During twinning, the nucleated new grain is in twin relation with the parent grain, and the twin relation math...
Publikováno v:
Acta Materialia. 144:41-50
We propose a model to explain the formation mechanism of twin grains at the three-grain tri-junction (3GTJ) on the growth interface during directional solidification of multi-crystalline silicon. We also attempt to confirm its validity by comparing w