Zobrazeno 1 - 10
of 299
pro vyhledávání: '"H.-J. Müssig"'
Autor:
P. Storck, H.-J. Müssig, Peter Zaumseil, Thomas Schroeder, Jarek Dabrowski, O. Seifarth, Alessandro Giussani
Publikováno v:
physica status solidi c. 6:653-662
Engineered Si wafer systems present an important materials science approach to further improve the performance of Si-based micro- and nanoelectronics. This is due to the potential to integrate alternative semiconductor layers on the mature Si wafer t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::108e0742fe04b476c5d904fbea6dfe12
https://doi.org/10.1002/pssc.200880715
https://doi.org/10.1002/pssc.200880715
Autor:
Ioan Costina, H.-J. Müssig, Ch. Lohe, Mindaugas Lukosius, Ch. Wenger, R. Sorge, S. Pasko, J. Dabrowski
Publikováno v:
Microelectronic Engineering. 85:1762-1765
HfO"2 films were grown by atomic vapour deposition (AVD) on SiO"2/Si (100) substrates. The positive shift of the flat band voltage of the HfO"2 based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9915664a57b3648fe8c38f665393aefa
https://doi.org/10.1016/j.mee.2008.05.002
https://doi.org/10.1016/j.mee.2008.05.002
Autor:
S. Pasko, R. Sorge, H.-J. Müssig, M. Lukosius, Ioan Costina, Christian Wenger, Jarek Dabrowski, Ch. Lohe
Publikováno v:
IEEE Transactions on Electron Devices. 55:2273-2277
Sr-Ta-O thin films were deposited as high-k dielectrics for metal-insulator-metal applications on 200-mm TiN/Si(100) substrates from a single-source Sr[Ta(OEt)5(methoxyethoxide)]2 precursor using atomic vapor deposition technique. The variation of pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7effcdaabdd65fdce85c22dc514a889
https://doi.org/10.1109/ted.2008.925286
https://doi.org/10.1109/ted.2008.925286
Autor:
S. Pasko, H.-J. Müssig, J. Dabrowski, M. Lukosius, Thomas Schroeder, Ioan Costina, R. Sorge, Ch. Lohe, Ch. Wenger
Publikováno v:
Microelectronic Engineering. 84:2165-2168
Sr"4Ta"2O"9 and HfO"2 films were prepared on 200 mm TiN/Si(100) substrates by Atomic Vapour Deposition (AVD). Depositions were carried out within a thermal budget of CMOS back end of line. Electrical properties have been investigated in metal-insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d84901484f5049fcf9d9403333f528
https://doi.org/10.1016/j.mee.2007.04.024
https://doi.org/10.1016/j.mee.2007.04.024
Autor:
Gunther Lippert, J. Dabrowski, Anil U. Mane, H.-J. Müssig, R. Sorge, Peter Zaumseil, Thomas Schroeder, G. Lupina, G. Weidner, Ch. Wenger
Publikováno v:
Microelectronic Engineering. 82:148-153
We present the process integration of the Pr-based high-k oxides Pr"2O"3, PrTi"xO"y and Pr"xSi"yO"z for CMOS devices. MOS structures were grown in form of p^+ poly-Si/Pr-based dielectric/Si(100) by MBE. RIE with CF"4/O"2 plasma was used to selectivel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73753a59a61b28a180d2101f0e6d8901
https://doi.org/10.1016/j.mee.2005.07.004
https://doi.org/10.1016/j.mee.2005.07.004
Autor:
H.-J. Müssig, Dieter Schmeißer
Publikováno v:
Solid-State Electronics. 47:1607-1611
Pr2O3 is currently under consideration as a potential replacement for SiO2 as the gate-dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. We studied the Pr2O3/Si(0 0 1) interface by a non-destructive de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e49d710fa5e677d3c9b8c6f48edffc3
https://doi.org/10.1016/s0038-1101(03)00178-3
https://doi.org/10.1016/s0038-1101(03)00178-3
Publikováno v:
Surface Science. 504:159-166
Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits, i.e., it has a dielectric constant K P 25 and is currently under consideration as potential replacement for SiO2 as the gate dielectric material for sub-0.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d69ef50c955414a57747dec373ace05
https://doi.org/10.1016/s0039-6028(01)01961-6
https://doi.org/10.1016/s0039-6028(01)01961-6
Publikováno v:
Journal of Crystal Growth. 235:229-234
We present the results for crystalline growth of praseodymium oxide on Si as a potential high- K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1407a94fdde6a31ec639b841d070df50
https://doi.org/10.1016/s0022-0248(01)01777-8
https://doi.org/10.1016/s0022-0248(01)01777-8
Publikováno v:
Materials Science and Engineering: B. 87:297-302
Praseodymium oxide is a potential high-K dielectric with promising electrical properties. Here, we present results for crystalline growth of praseodymium oxide on Si. On Si(001) surfaces, crystalline Pr2O3 grows as (110) domains, with two orthogonal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81fbc1e568c4ee5c578950cd69fd818e
https://doi.org/10.1016/s0921-5107(01)00728-0
https://doi.org/10.1016/s0921-5107(01)00728-0
Publikováno v:
Solid-State Electronics. 45:1219-1231
We report the first direct observation of dissociative chemisorption of oxygen molecules on a silicon surface at room temperature via a molecular precursor state. We link this to the fact that smooth oxide layers can be grown easily on Si( 1 1 3 ). T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bfcf3a2b635de8fd34fc3c0fe7c4398
https://doi.org/10.1016/s0038-1101(00)00273-2
https://doi.org/10.1016/s0038-1101(00)00273-2