Zobrazeno 1 - 10
of 128
pro vyhledávání: '"H.-J. Lugauer"'
Autor:
T. Schulz, L. Lymperakis, S.-H. Yoo, Artur Lachowski, H. Foronda, C. Brandl, H.-J. Lugauer, M. P. Hoffmann, Martin Albrecht
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faf7fda6aa8c1f85446c0460eb33a634
https://doi.org/10.1117/12.2649967
https://doi.org/10.1117/12.2649967
Autor:
T. Schulz, S.-H. Yoo, L. Lymperakis, C. Richter, E. Zatterin, A. Lachowski, C. Hartmann, H. M. Foronda, C. Brandl, H. J. Lugauer, M. P. Hoffmann, M. Albrecht
Publikováno v:
Journal of Applied Physics
The influence of edge-type threading dislocations (TDs) on the epitaxial growth of AlGaN on native AlN substrates was investigated theoretically and experimentally. In the step flow growth regime, we find that pure edge-type TDs cause a pinning of su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aae5e3b4f323e18a899ea7d16279eca
https://hdl.handle.net/21.11116/0000-000B-FC1D-A21.11116/0000-000B-FC1F-8
https://hdl.handle.net/21.11116/0000-000B-FC1D-A21.11116/0000-000B-FC1F-8
Publikováno v:
physica status solidi (a). 180:225-229
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02ac1e365bb0b6d4baef0150d762cf3c
https://doi.org/10.1002/1521-396x(200007)180:1<225::aid-pssa225>3.0.co
https://doi.org/10.1002/1521-396x(200007)180:1<225::aid-pssa225>3.0.co
Autor:
Peter Michler, H.‐J. Lugauer, Volker Härle, Jürgen Gutowski, O. Lange, Martin Vehse, Stefan Bader, Berthold Hahn
Publikováno v:
physica status solidi (a). 180:391-396
We performed systematic studies of the optical gain and its saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures in dependence on photon energy, excitation density and number of quantum wells. The optical gain and its saturation were obtained by mean
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2c485ca3fed9934bb60aa894f8fb13
https://doi.org/10.1002/1521-396x(200007)180:1<391::aid-pssa391>3.0.co
https://doi.org/10.1002/1521-396x(200007)180:1<391::aid-pssa391>3.0.co
Publikováno v:
Journal of Crystal Growth. :1071-1074
We report the growth and characterization of LEDs with wavelengths from 640 to 515 nm based on ZnSe/BeTe type-II transitions. The spatially indirect transition shows bright luminescence at room temperature probably due to a strong carrier confinement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c605612f30dd71511895e9f7b88708
https://doi.org/10.1016/s0022-0248(00)00276-1
https://doi.org/10.1016/s0022-0248(00)00276-1
Autor:
M. Cardona, Andreas Waag, F. Fischer, M. Keim, Veit Wagner, Wolfgang Richter, C. Cobet, H.-J. Lugauer, Norbert Esser, T. Gerhard, T. Wethkamp, K. Wilmers
Publikováno v:
Scopus-Elsevier
We have determined the dielectric function (DF) of beryllium chalcogenides between 2.5 and 25 eV using an ellipsometer operating with synchrotron radiation in the VUV range. The VUV ellipsometer is, in particular, useful for the characterization of w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f0593dfc30b294ea6a3cb9def664b7e
https://doi.org/10.1002/(sici)1521-3951(199909)215:1<15::aid-pssb15>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199909)215:1<15::aid-pssb15>3.0.co
Autor:
T. V. Shubina, A. A. Toropov, Zh. I. Alferov, F. Fischer, M. Keim, Andreas Waag, H.-J. Lugauer, G. Reuscher, Sergei Ivanov, I. V. Sedova, G. Landwehr, P. S. Kop’ev, S. V. Sorokin
Publikováno v:
Semiconductors. 33:1016-1020
We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractional-monolayer CdSe recombination region in an expanded ZnSe quantum well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522caf3e0e38f83c25f0cdc61bc806c4
https://doi.org/10.1134/1.1187829
https://doi.org/10.1134/1.1187829
Autor:
Veit Wagner, M. Keim, F. Fischer, W. Richter, H.-J. Lugauer, T. Gerhard, Norbert Esser, T. Wethkamp, K. Wilmers, C. Cobet, Manuel Cardona
Publikováno v:
Journal of Electronic Materials. 28:670-677
We have determined the dielectric function of BeTe and BexZn1−xSe for the full composition range (0≤x≤1) by spectroscopic ellipsometry in the ultraviolet- and vacuum ultraviolet-range. The spectra show pronounced features in the photon energy r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab9d5bc57af7af7bc1bfc0d2dec2f9dd
https://doi.org/10.1007/s11664-999-0052-8
https://doi.org/10.1007/s11664-999-0052-8
Autor:
M. Keim, P. S. Kop’ev, A. V. Lebedev, T. V. Shubina, Andreas Waag, L. Worschech, A. A. Toropov, Sergei Ivanov, G. Landwehr, G. Reuscher, H.-J. Lugauer
Publikováno v:
Journal of Crystal Growth. :946-949
The paper presents results of detailed optical characterization of ZnSe-based quantum well (QW) laser heterostructures by resonant Rayleigh scattering (RRS) and waveguide absorption measurements, along with conventional photoluminescence (PL) and PL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b6169640af3e6de8c05299bae67fe8a
https://doi.org/10.1016/s0022-0248(98)01499-7
https://doi.org/10.1016/s0022-0248(98)01499-7
Autor:
H.-J. Lugauer, Irina V. Sedova, Andreas Waag, G.N. Mosina, V. A. Solov’ev, G. Landwehr, M. Keim, S. V. Sorokin, Sergei Ivanov, G. Reuscher
Publikováno v:
Journal of Crystal Growth. :481-485
Cathodoluminescence (CL) is shown to be a very effective and fast technique for the study of defects and their spatial distributions in ZnSe-based epilayers and heterostructures, including laser diodes grown by MBE on GaAs. A relatively low electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42b382c881d227457a96d7af881d8710
https://doi.org/10.1016/s0022-0248(98)01381-5
https://doi.org/10.1016/s0022-0248(98)01381-5