Zobrazeno 1 - 10
of 63
pro vyhledávání: '"H.-J. Fröhlich"'
Autor:
M. Colucci, H. J. Fröhlich
Publikováno v:
Automation 2017
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbf3e20ee5694f2f2fa40ce1fe9af93
https://doi.org/10.51202/9783181022931-63
https://doi.org/10.51202/9783181022931-63
Autor:
D. Vaissière, H. J. Fröhlich
Publikováno v:
Tagungsband.
Autor:
H. J. Fröhlich
Publikováno v:
AUTOMATION 2016
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff9840e432333ad3c318e8d6668b5152
https://doi.org/10.51202/9783181022849-89
https://doi.org/10.51202/9783181022849-89
Publikováno v:
Journal of Applied Physics. 90:6084-6091
We have determined the elastic constants of langasite-type crystals (La3Ga5SiO14, La3Ga5.5Nb0.5O14, and La3Ga5.5Ta0.5O14) from measurements of the sound velocity of acoustic waves. Starting with the elastic tensor determined from bulk acoustic waves,
Autor:
J. Bohm, U. Straube, E. Chilla, C. M. Flannery, H.-J. Fröhlich, M. Hengst, R.B. Heimann, T. Hauke
Publikováno v:
Journal of Crystal Growth. 216:293-298
Mass densities, relative dielectric constants, and piezoelectric material parameters were determined on single crystals of LGS, LGN, and LGT grown with high structural perfection by the Czochralski technique. Optimized values of the elastic stiffness
Publikováno v:
Journal of Applied Physics. 86:7094-7099
We describe an approach to scanning capacitance microscopy. A mixing technique is employed for imaging local capacitance variations simultaneously with the sample topography using an atomic force microscope (AFM) with a conductive tip. A SiO2/Si samp
Publikováno v:
Review of Scientific Instruments. 70:3377-3380
We present a detailed description of an experimental setup for alternating current scanning tunneling microscopy, in which two slightly detuned high frequency signals are mixed at the tunneling junction and the resulting difference frequency signal i
Publikováno v:
Smart Materials and Structures. 6:721-729
The use of AlAs/GaAs layered structures for SAW sensor applications is discussed with the aim of exploring the potential of the material system for the integration of SAW and electronic devices. Based on the acoustic wave spectrum on the (001) cut of