Zobrazeno 1 - 10
of 18
pro vyhledávání: '"H.-G. Hettwer"'
Publikováno v:
Defect and Diffusion Forum. :1117-1124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1268cefbe6a1b70c7d1a15ac39cbe9ce
https://doi.org/10.4028/www.scientific.net/ddf.143-147.1117
https://doi.org/10.4028/www.scientific.net/ddf.143-147.1117
Autor:
Nicolaas Stolwijk, Wolfgang Jäger, H.-G. Hettwer, K. Urban, A. Rucki, Helmut Mehrer, G. Bösker
Publikováno v:
Materials Chemistry and Physics. 42:68-71
Diffusion of Zn at high concentrations into GaAs under As-deficient ambient conditions causes generation of crystal defects like dislocation loops, elongated dislocations and Ga precipitates decorated with voids throughout the diffusion zone. Similar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899147c56873e9e86b6e3f24ffa9294b
https://doi.org/10.1016/0254-0584(95)80042-5
https://doi.org/10.1016/0254-0584(95)80042-5
Publikováno v:
Materials Science and Engineering: B. 30:43-53
Silicon diffusion was carried out from a thin (50 nm) sputtered film into undoped semi-insulating and Te- or Zn-doped LEC-GaAs at 900 °C for 5 h under various As pressures. Secondary ion mass spectroscopy and spreading resistance technique were used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51a26ecfbe39e52ea29253b605de52bc
https://doi.org/10.1016/0921-5107(94)01137-0
https://doi.org/10.1016/0921-5107(94)01137-0
Autor:
Hartmut Bracht, Wolfgang Jäger, Helmut Mehrer, H.-G. Hettwer, Nicolaas Stolwijk, Wilfried Lerch, A. Rucki
Publikováno v:
Materials Science Forum. :475-492
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43f52acfa3f649d57e6cd6b62c9e4b97
https://doi.org/10.4028/www.scientific.net/msf.155-156.475
https://doi.org/10.4028/www.scientific.net/msf.155-156.475
Autor:
Helmut Mehrer, Wolfgang Jäger, Teh Y. Tan, Nicolaas Stolwijk, K. Urban, A. Rucki, H.-G. Hettwer
Publikováno v:
Journal of Applied Physics. 74:4409-4422
An experiment of diffusing Zn into GaAs has been conducted at 900 °C using Zn metal as the source material in a quartz ampoule, with or without As being included. For cases without further including As in the ampoule, the Zn profile is box shaped an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b25e24e2603542d9dabfb399a57838a
https://doi.org/10.1063/1.354412
https://doi.org/10.1063/1.354412
Publikováno v:
Applied Surface Science. 50:470-474
Diffusion experiments of zinc in gallium arsenide and phosphorus in silicon were carried out by using the closed-ampoule technique. Penetration profiles were recorded by means of spreading-resistance (SR) as well as electron-microprobe (EMP) analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4063c5cf1711be375e485a03aedfad4b
https://doi.org/10.1016/0169-4332(91)90220-e
https://doi.org/10.1016/0169-4332(91)90220-e
Autor:
Helmut Mehrer, Wolfgang Jäger, R. H. Dixon, D. Wittorf, H.-G. Hettwer, K. Urban, Nicolaas Stolwijk, A. Rucki
Publikováno v:
Journal of Applied Physics. 77:2843-2845
Formation of defects during Zn diffusion into undoped and semi‐insulating Fe‐doped InP single crystals at 700 °C was observed by transmission electron microscopy for various diffusion conditions. Agglomerates of predominantly perfect interstitia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5acad350cf91dd3cd837397d9cad7332
https://doi.org/10.1063/1.358698
https://doi.org/10.1063/1.358698
Publikováno v:
Physical review. B, Condensed matter. 52(16)
The fast diffusion of Zn into GaAs has recently been attributed to a minor fraction of Zn interstitials changing over to Ga sites thereby producing interstitial Ga (${\mathit{I}}_{\mathrm{Ga}}$). This kick-out reaction provides the possibility to det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c72edd45babc7ed34fccdd0d491ab8dc
https://pubmed.ncbi.nlm.nih.gov/9980331
https://pubmed.ncbi.nlm.nih.gov/9980331
Autor:
Wolfgang Jäger, A. Rucki, D. Wittorf, Knut Urban, Nicolaas Stolwijk, Helmut Mehrer, H.-G. Hettwer
Publikováno v:
MRS Proceedings. 378
Formation of defects during Zn diffusion into undoped and Fe-doped InP single crystals at 700°C has been observed by transmission electron microscopy for various diffusion conditions. The observations are correlated with Zn concentration profiles ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0936534710f81cf3bd1aecaeb8aae945
https://doi.org/10.1557/proc-378-183
https://doi.org/10.1557/proc-378-183
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