Zobrazeno 1 - 10
of 30
pro vyhledávání: '"H.-D Mohring"'
Autor:
F. H. Klotz., H.-D. Mohring, T. Bruton, M. Alonso Abella, P. Tzanetakis, M. Gasson, C. Gruel, J. Sherborne
Publikováno v:
Sixteenth European Photovoltaic Solar Energy Conference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c8150ec0e057600f07c618c7f613e0
https://doi.org/10.4324/9781315074405-42
https://doi.org/10.4324/9781315074405-42
Autor:
C.K. Weatherby, R.W. Bentley, G.R. Whitfield, Juan C. Miñano, E Alarte-Garvi, P Keuber, A.C Hunt, H.-D Mohring, F.H Klotz
Publikováno v:
Scopus-Elsevier
Spreadsheets have been used to compare some 90 possible small PV concentrator designs that might be suitable for use at remote sites. They have apertures of about 2 m2, use BP Solar LBG cells, and employ small aperture modules to reduce heat sinking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::598e4ad8e6cd48e316e3361da57d4811
https://doi.org/10.1016/s0038-092x(00)00045-1
https://doi.org/10.1016/s0038-092x(00)00045-1
Publikováno v:
Journal of Non-Crystalline Solids. :195-198
Structural changes have been studied as a function of deposition temperature Ts in intrinsic a-Si:H and a-Ge:H. Bond angle disorder as indicated by the halfwidth of the transverse optic (TO) like Raman band is minimized at Ts ≈ 500K in a-Ge:H from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf6fd1ac648cea129b0413bedacd6a3e
https://doi.org/10.1016/s0022-3093(05)80089-4
https://doi.org/10.1016/s0022-3093(05)80089-4
Publikováno v:
Journal of Non-Crystalline Solids. :847-850
Intrinsic a-SiC:H films with optical bandgaps E g ≤ 2.0 eV have been optimized with respect to minimum PDS Urbach energy E 0 . We demonstrate that the increasing density of midgap defects induced by C incorporation controls AM1 photoconductivity at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::150228efdffc9d89e537d7b65ddecda2
https://doi.org/10.1016/s0022-3093(05)80252-2
https://doi.org/10.1016/s0022-3093(05)80252-2
Publikováno v:
Journal of Non-Crystalline Solids. :745-748
A novel plasma jet technique has been applied for a-Ge:H film deposition basing upon the excitation of nobel/inert gases like He, Ar, or H2 by a large area dielectric barrier ac-discharge. The spatial distribution of radicals generated from GeH4 has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8312f8b02bda016687526351cda15015
https://doi.org/10.1016/s0022-3093(05)80228-5
https://doi.org/10.1016/s0022-3093(05)80228-5
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
Intrinsic a-SiC:H thin films with optical bandgaps E/sub g/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb912a365099e147d0de1a07e469860
https://doi.org/10.1109/pvsc.1991.169429
https://doi.org/10.1109/pvsc.1991.169429
Publikováno v:
MRS Proceedings. 258
Infrared (ir) spectroscopy is used to investigate the structural properties of a-SiC:H in a wide compositional range and as a function of film thickness. Hydrogen content NH increases considerably with increasing carbon fraction. For low carbon alloy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74935ebcec9f42b1ffef77741aeeb821
https://doi.org/10.1557/proc-258-673
https://doi.org/10.1557/proc-258-673
Publikováno v:
MRS Proceedings. 192
A vacuum UV-photo-CVD reactor for direct decomposition of Si2H6, SiH4, GeH4, and B2H6 for a-Si:H, a-Ge:H, and a-SiGe:H deposition has been operated with a large area dielectric-barrier discharge lamp emitting excimer radiation of Xe (7.3eV), Kr (8.6e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b17f89c7e70576c05bce52428b7ee49
https://doi.org/10.1557/proc-192-559
https://doi.org/10.1557/proc-192-559
Publikováno v:
Journal of Non-Crystalline Solids. :1415-1418
Hydrogenated amorphous SiC films have been p-type doped in an alternative process which is based upon plasma enhanced boron diffusion (PAD) from thin SiB layers on the substrate into the growing intrinsic film. In contrast to B2H6 doped films showing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57ed57d80bb78c790c95b4f35a814bbe
https://doi.org/10.1016/0022-3093(87)90339-5
https://doi.org/10.1016/0022-3093(87)90339-5