Výsledky vyhledávání - "H. von Philipsborn"

Substrate current and degradation of trench LDD transistors

Autor: F. Hofmann, H. von Philipsborn, Erhard Landgraf, T. Schulz

Publikováno v: Solid-State Electronics. 46:965-970

The substrate current and degradation behaviour of a novel trench LDD MOSFET, to be used as a high voltage device in the periphery of flash memories, is studied. At high drain voltage an unusual increase of the substrate current for high gate voltage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::251d5811d7484bd65bb7774d8be29f16
https://doi.org/10.1016/s0038-1101(02)00027-8

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Phase formation and crystal growth of Sr–Bi–Ta–O thin films grown by metalorganic chemical vapor deposition

Autor: Rainer Waser, B. Jobst, Walter Hartner, A. Kiendl, Christine Dehm, Herbert Schroeder, H. von Philipsborn, Harald Bachhofer

Publikováno v: Journal of Materials Research. 16:2966-2973

The crystallization process of SrxBiyTa2O5+x+3y/2 thin films grown by metalorganic chemical vapor deposition was investigated. Phase formation and crystal growth is greatly affected by the film composition and crystallization temperature. Phase diagr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::78e3318bde26fb73131f256156f8610f
https://doi.org/10.1557/jmr.2001.0407

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Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

Autor: Hans Reisinger, Harald Bachhofer, Emmerich Bertagnolli, H. von Philipsborn

Publikováno v: Journal of Applied Physics. 89:2791-2800

The voltage- and time-dependence of the tunneling currents in polysilicon–oxide–nitride–oxide semiconductor structures have been investigated. Electron and hole contributions were separated using a shallow junction technique. The standard tunne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd16150a7fa2d93d6ed73a5f96046861
https://doi.org/10.1063/1.1343892

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Oxidation Enhanced Diffusion of Boron in Silicon‐on‐Insulator Substrates

Autor: Stephan Pindl, H. Schafer, Erwin Dipl Phys Dr Hammerl, Markus Biebl, H. von Philipsborn

Publikováno v: Journal of The Electrochemical Society. 144:4022-4026

The oxidation enhanced diffusion (OED) of boron and diffusion as well as recombination of interstitials on silicon-on-insulator (SOI) material have been studied in periodically boron-doped silicon. Bonded wafers (BESOI UNIBOND) as well as oxygen-impl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::84f9efb906b9618925b0b9a7ce4a3fd1
https://doi.org/10.1149/1.1838129

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