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pro vyhledávání: '"H. X. Huyan"'
Autor:
J. W. Lee, K. Eom, T. R. Paudel, B. Wang, H. Lu, H. X. Huyan, S. Lindemann, S. Ryu, H. Lee, T. H. Kim, Y. Yuan, J. A. Zorn, S. Lei, W. P. Gao, T. Tybell, V. Gopalan, X. Q. Pan, A. Gruverman, L. Q. Chen, E. Y. Tsymbal, C. B. Eom
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
In-plane polarized ferroelectric thin films typically exhibit complicated multidomain states, not desirable for optoelectronic device performance. Here, the authors combine interfacial symmetry engineering and anisotropic strain to design single-doma
Externí odkaz:
https://doaj.org/article/17eb12170f19442aaaaa33ca770ee35b
