Zobrazeno 1 - 10
of 25
pro vyhledávání: '"H. W. RICHTER"'
Autor:
H.-W. Richter, P. Pérez González
Publikováno v:
Aktuelle Neurologie. 28:391-393
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f137275acaa7bb4648e11055cc92819
https://doi.org/10.1055/s-2001-17535
https://doi.org/10.1055/s-2001-17535
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:1011-1015
We have extended cathodoluminescence spectroscopy (CLS) to the study of new compound and defect formation at metal–semiconductor interfaces. CLS provides evidence for Cu2S and/or impurity band formation after laser annealing Cu on UHV‐cleaved CdS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52f03e83ab8461120fe13d6b6786e550
https://doi.org/10.1116/1.573110
https://doi.org/10.1116/1.573110
Titanium–silicon and silicon dioxide reactions controlled by low temperature rapid thermal annealing
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:993-997
Auger electron spectroscopy measurements coupled with sputter depth profiling demonstrate that titanium silicide forms between Ti and SiO2 at conventional annealing temperatures in UHV and that rapid thermal annealing at relatively low temperatures c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96fa10734dcc9f29e69095c36c079dfc
https://doi.org/10.1116/1.573772
https://doi.org/10.1116/1.573772
Publikováno v:
Journal of Applied Physics. 60:1994-2002
We have used pulsed laser annealing to promote and characterize highly localized chemical reactions at Al interfaces with III‐V compound semiconductors. At successive stages of these laser‐induced reactions, we have monitored atomic movement and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76fe147ecb34f0bbcd4cf0ed336ef5db
https://doi.org/10.1063/1.337784
https://doi.org/10.1063/1.337784
Acceptorlike electron traps and thermally reversible barrier heights for Al on UHV‐cleaved (110) InP
Publikováno v:
Journal of Applied Physics. 58:3154-3161
Temperature‐dependent current‐voltage (I‐V) and capacitance‐voltage (C‐V) measurements reveal that a low but nonzero barrier is present at the interface of Al deposited on ultrahigh‐vacuum‐cleaved n‐InP (110), and that the true barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77975ab61c8cbad441125ab631f7f511
https://doi.org/10.1063/1.335820
https://doi.org/10.1063/1.335820
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:1437-1445
Low‐energy cathodoluminescence spectroscopy (CLS) is a powerful new technique for characterizing the electronic structure of semiconductor surfaces and ‘‘buried’’ metal–semiconductor interfaces. This extension of a more conventional elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00197a286db499aa3a565ce0ae9a1529
https://doi.org/10.1116/1.575722
https://doi.org/10.1116/1.575722
Publikováno v:
Journal of Applied Physics. 56:2351-2355
A new low‐temperature method of rapidly forming (>100 A/sec) high‐quality patterned silicon dioxide (SiO2) layers up to a thickness of 1 μm on silicon substrates is presented. Ultraviolet pulsed laser excitation in an oxygen environment is utili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfef1a21e3ee608ed4e34e3d9a0506fd
https://doi.org/10.1063/1.334273
https://doi.org/10.1063/1.334273
Control of titanium‐silicon and silicon dioxide reactions by low‐temperature rapid thermal annealing
Publikováno v:
Applied Physics Letters. 47:1080-1082
Auger electron spectroscopy/depth profiling measurements demonstrate that titanium silicide forms between titanium and silicon dioxide at conventional annealing temperatures. Low‐temperature rapid thermal annealing provides a process window in time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e9e1af5380cefe6a972c606dde8d295
https://doi.org/10.1063/1.96386
https://doi.org/10.1063/1.96386
Autor:
H.-W. Richter, G. G. Brune
Publikováno v:
Geriatrie in der Praxis ISBN: 9783642660016
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6adaf5efb5ddb48b9f34a7234b9fd5
https://doi.org/10.1007/978-3-642-66000-9_17
https://doi.org/10.1007/978-3-642-66000-9_17
Publikováno v:
Chemischer Informationsdienst. 16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88adbbe52303f647745d5268f1385735
https://doi.org/10.1002/chin.198530114
https://doi.org/10.1002/chin.198530114