Zobrazeno 1 - 10 of 21 pro vyhledávání: '"H. W. P. Koops"'
1
Contact and line resistivity in nanogranular compound materials fabricated with focused electron beam induced processing
Autor: H. W. P. Koops, Ivo W. Rangelow
Publikováno v: 2017 30th International Vacuum Nanoelectronics Conference (IVNC).
Using organometallic compounds and an electron beam of high power density, novel nano-granular compound materials were fabricated with nm precision in a slow step deposition process. We investigate the electrical characteristics of the compound-mater
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::444f706c085aaec5d024bc8431ec7998
https://doi.org/10.1109/ivnc.2017.8051562
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2
Advanced multiple beam-shaping diaphragm for efficient exposure
Autor: G. Dahm, H. W. P. Koops, H.-J. Döring, H. Schacke, H. Elsner
Publikováno v: Microelectronic Engineering. 23:85-88
We developed a procedure to fabricate multiple beam shaping diaphragms (MBSD) for use in variable-shaped beam machines of ZBA 31/32 type from JENOPTIK. These diaphragms increase throughput drastically when exposing special patterns. We printed throug
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5364046216a0fa8a29eb605834b1a1a
https://doi.org/10.1016/0167-9317(94)90110-4
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8
Evaluation of Moiré patterns obtained by the 'self-comparison-method' to characterize particle beam lithography systems
Autor: H. Oki, R. Zengerle, W. Betz, H. J. Heun, H. W. P. Koops
Publikováno v: Microelectronic Engineering. 11:397-400
To characterize instabilities, drifts, field distortions, and stitching errors of particle beam lithography systems with 10 nm resolution using optical microscopy and scanning electron microscopy, we employ the SELF-COMPARISON-METHOD. The superpositi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85b2544b8895bf81a8d28c42ae72592f
https://doi.org/10.1016/0167-9317(90)90138-j
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9
Simulation of scanning tunneling microscope interaction with resists
Autor: E. A. Dobisz, H. W. P. Koops, F. K. Perkins
Publikováno v: Applied Physics Letters. 68:3653-3655
Three‐dimensional electron optical simulations were used to model scanning tunneling microscope (STM) lithography in resists under field emission conditions. This work focuses on the effect of resists, as dielectric layers, between the tip and cond
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a2043df9bc204ca4bef151da1fc519d
https://doi.org/10.1063/1.115760
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10
Nano-Lithography in 3 Dimensions with Electron Beam Induced Deposition
Autor: M. Rudolph, H. W. P. Koops, J. Kretz, Markus Weber
Publikováno v: NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies ISBN: 9789048143887
Electron beam induced deposition from organic and metalorganic precursors allows to generate two and three-dimensional patterns and structures. Using a very fine electron beam in a dedicated field emission scanning electron microscope renders nanomet
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::53291370a215cc670601713e780b07ed
https://doi.org/10.1007/978-94-015-8261-2_10
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