Zobrazeno 1 - 5
of 5
pro vyhledávání: '"H. V. Meer"'
Autor:
B. N. Guo, N. Pradhan, Y. Zhang, H.-J. Gossmann, H. V. Meer, A. Waite, B. Colombeau, K. H. Shim
Publikováno v:
MRS Advances. 7:1468-1471
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6440e2ae959b18e0da7454c7854c8f84
https://doi.org/10.1557/s43580-022-00413-0
https://doi.org/10.1557/s43580-022-00413-0
Autor:
Necip Doganaksoy, H. V. Meer
Publikováno v:
Quality Engineering. 27:500-511
Designers and manufacturers in the semiconductor industry constantly seek ways of improving device performance without an undue increase in power consumption. A particular concern for battery powered mobile electronics is the increased propensity for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1266ced818dce649615b26d123971af
https://doi.org/10.1080/08982112.2015.1068330
https://doi.org/10.1080/08982112.2015.1068330
Autor:
Changyong Xiao, Andy Wei, Dina H. Triyoso, J. Lian, Edmund Banghart, W. H. Tong, Y. Liu, Deepasree Konduparthi, Rohit Pal, Seong Yeol Mun, B. Liu, M. H. Nam, H. V. Meer, Manfred Eller, Girish Bohra, Chloe Yong, X. Zhang, Shesh Mani Pandey, Rick Carter, Manoj Joshi, Xusheng Wu, Mitsuhiro Togo, Xiaoli He, Srikanth Samavedam
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
An advanced Replacement Metal Gate (RMG) module was developed for 14nm node FinFETs and beyond. STI oxide extra recess increases on-current without any dedicated Source and Drain (SD) optimization. Tungsten (W) selective etch recesses work function m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24fcdff540092d6707ecb3d6e6403991
https://doi.org/10.1109/vlsit.2014.6894392
https://doi.org/10.1109/vlsit.2014.6894392
Autor:
R. Divakaruni, Jaeger Daniel, Richard A. Wachnik, N-S. Kim, M. Celik, Y. Takasu, J. Sudijono, S. Mori, Melanie J. Sherony, H. Nishimura, Michael P. Chudzik, K-C. Lee, Y-W. Teh, Liyang Song, Ricardo A. Donaton, J.-P. Han, E. Kaste, T. Iwamoto, Knut Stahrenberg, Vijay Narayanan, J. Liang, Fumiyoshi Matsuoka, Manfred Eller, S. Kohler, K. Kim, JiYeon Ku, Katsura Miyashita, M-H. Na, S. Johnson, Wai-kin Li, Jongpal Kim, H. V. Meer, Christophe Bernicot, Ron Sampson, Deleep R. Nair, Franck Arnaud, M. Sekine, W. Neumueller, S. Miyake, Masafumi Hamaguchi, Kathy Barla, J.H. Park, H. Kothari
Publikováno v:
2011 International Electron Devices Meeting.
We report a new N/PFET Gate Patterning Boundary Proximity layout dependent effect in high-k dielectric/Metal Gate (HK/MG) MOSFETs which causes anomalous threshold voltage (V t ) modulation for the first time. We investigated the mechanism by using sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6c4ef6fa05863728895d8e57c28c48a
https://doi.org/10.1109/iedm.2011.6131614
https://doi.org/10.1109/iedm.2011.6131614
Autor:
Frank Scott Johnson, Moritz Voelker, Muhsin Celik, An L. Steegen, Kenneth J. Stein, Katsura Miyashita, Anda Mocuta, Deleep R. Nair, Shinich Miyake, Gen Tsutsui, Li-Hong Pan, Knut Stahrenberg, Sadaharu Uchimura, Melanie J. Sherony, Jae Hoo Park, Martin Ostermayr, Christian Wiedholz, Richard A. Wachnik, Myung-Hee Na, Jin-Ping Han, Ed Kaste, Franck Arnaud, T. Shimizu, Jaeger Daniel, W. Neumueller, Haoren Zhuang, Ja-hum Ku, Ricardo A. Donaton, Christophe Bernicot, Atsushi Azuma, Nam-Sung Kim, Yoshiro Goto, Kathy Barla, Kisang Kim, Manfred Eller, Jenny Lian, Ron Sampson, H. V. Meer, Sabrina Kohler, D. Chanemougame, Masafumi Hamaguchi, Jewel Liang, Weipeng Li, Guoyong Yang, J. Sudijono
Publikováno v:
Japanese Journal of Applied Physics. 50:04DC13
High performance analog (HPA) devices in high-k metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed “f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::633690ed1b71724230ec0aee8db5bd18
https://doi.org/10.1143/jjap.50.04dc13
https://doi.org/10.1143/jjap.50.04dc13