Zobrazeno 1 - 2
of 2
pro vyhledávání: '"H. V. Aliguliyeva"'
Autor:
I. T. Mamedova, K. M. Mustafayeva, A. M. Kerimova, N. M. Abdullaev, P. O. Bulanchuk, H. V. Aliguliyeva, N. T. Mamedov, N. A. Abdullaev, Sergey A. Nemov
Publikováno v:
Semiconductors. 47:602-605
The conductivity, Hall effect, and magnetoresistance of Bi2(Te0.9Se0.1)3 solid solution thin films are studied in a wide temperature range from 2.5 to 300 K and in high magnetic fields of up to 8 T. It is found that the conductivity of Bi2(Te0.9Se0.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::533a9c1cb67aef9c9f8adab10712000f
https://doi.org/10.1134/s1063782613050023
https://doi.org/10.1134/s1063782613050023
Autor:
N. M. Abdullaev, G. S. Mehdiyev, N. A. Abdullaev, Sergey A. Nemov, T. G. Kerimova, H. V. Aliguliyeva
Publikováno v:
Semiconductors. 45:37-42
The temperature dependences (T = 5−300 K) of the resistivity in the plane of layers and in the direction perpendicular to the layers, as well as the Hall effect and the magnetoresistance (H < 80 kOe, T = 0.5−4.2 K) in Bi2Te3 single crystals doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2cde1bd904b9915c2757b697477a30
https://doi.org/10.1134/s1063782611010027
https://doi.org/10.1134/s1063782611010027