Zobrazeno 1 - 10
of 12
pro vyhledávání: '"H. Vöhse"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:213-217
(Fe 80 Co 20 )Si 2 is formed by two-step implantation of 4 × 10 17 Fe cm −2 and 1 × 10 17 Co cm −2 with an intermediate annealing between the implantations. The depth distribution of Fe and Co and its change by post implantation annealing is in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09dd2b171b6d2467e1232eb6c59f03d1
https://doi.org/10.1016/0168-583x(93)95046-8
https://doi.org/10.1016/0168-583x(93)95046-8
Autor:
A. De Veirman, R. Grötzschel, J. Schoneich, H. Vöhse, J. Albrecht, K. Wollschläger, Wolfgang Skorupa
Publikováno v:
Materials Science and Engineering: B. 12:63-66
Using ion beam synthesis, a buried stacked layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) was formed in single-crystal silicon. Characterization was performed by Rutherford backscat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9fa20a63ba982681cd5a93dcf36241a
https://doi.org/10.1016/0921-5107(92)90260-g
https://doi.org/10.1016/0921-5107(92)90260-g
Publikováno v:
MRS Fall Meeting 1993, Boston
By subsequent implantation of iron and cobalt into silicon buried layers of semiconducting ß-(Fe1-xCo1-x)Si2 are formed. The band gap energy as well as the spreading resistance decrease with increasing cobalt content. The microstructure of the suici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c868cf6a5fa02bf55c84ba73088d41a
https://doi.org/10.1557/proc-316-723
https://doi.org/10.1557/proc-316-723
Publikováno v:
MRS Proceedings. 279
A buried (Fe1−xCox) Si2 (x < 0.2) layer was formed by two step high dose implantation of Fe and Co into {100}-Si with as well as without intermediate annealing between the implantations. The suicide layer remains semiconducting if the temperature o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6d4edf1331f2bf65548613ee1e86392
https://doi.org/10.1557/proc-279-111
https://doi.org/10.1557/proc-279-111
Publikováno v:
MRS Proceedings. 235
We report on the formation and properties of a new type of a buried insulator using combined nitrogen/oxygen implantation with two different implantation energies. In this manner, a stacked layer consisting of silicon dioxide above silicon oxynitride
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f78bd3ff2915ab36dc509ddcc80c078
https://doi.org/10.1557/proc-235-127
https://doi.org/10.1557/proc-235-127
Autor:
H. Vöhse, P. Dietzmann
Publikováno v:
Practical Metallography. 22:55-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2dc15ffd9ecacff62d3bb98be36e8d4
https://doi.org/10.1515/pm-1985-220202
https://doi.org/10.1515/pm-1985-220202
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