Zobrazeno 1 - 10
of 52
pro vyhledávání: '"H. Tsuyuzaki"'
Publikováno v:
A60. LUNG INJURY, SEPSIS, AND ARDS.
Publikováno v:
Acta Horticulturae. :277-282
Publikováno v:
Acta Horticulturae. :251-257
Akademický článek
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Publikováno v:
Microelectronic Engineering. :291-295
A new gap detection method for synchrotron radiation (SR) X-ray lithography has been developed. Two laser lights with different wavelengths λ1 and λ2 are used as light sources. The proximity gap between a mask and a wafer was measured by noting the
Publikováno v:
Microelectronic Engineering. :263-266
An x-ray exposure system for 100-nm-order synchrotron radiation lithography is now being developed. We focused on improving the resolution, alignment accuracy, and beam-intensity uniformity. The key technologies are a flat wafer chuck to enable the u
Publikováno v:
Microelectronic Engineering. 35:537-540
The alignment accuracy of the X-ray stepper SS-1 for synchrotron radiation (SR) lithography was evaluated. The mark state changes whenever the process layer is deposited. The alignment mark can be classified into four types based on the mark composit
Publikováno v:
Microelectronic Engineering. 30:203-206
Patterning characteristics under mechanical vibrations between mask and wafer are investigated in terms of pattern profile deformation, linewidth change, and exposure dose margin by performing exposure experiments and using a Fresnel diffraction simu
Publikováno v:
Microelectronic Engineering. 27:291-294
Two SR steppers, SS-1[1] and SS-2, are used at the NTT SR facility to accelerate the development of LSIs with a feature size of 0.2 microns or less. This paper presents the compatibility of the two SR steppers focusing on overlay accuracy. For steppe
Autor:
H. Aoyama, Sunao Ishihara, Akinori Shibayama, M. Suzuki, T. Haga, Takao Taguchi, M. Fukuda, Souichirou Mitsui, H. Morita, H. Tsuyuzaki, Yasuji Matsui
Publikováno v:
Initiatives of Precision Engineering at the Beginning of a Millennium ISBN: 9780792374145
X-ray lithography using synchrotron radiation (SR) is a promising tool for fabricating large-scale integrated circuits (LSIs) with device feature sizes as small as 100 nm. The making of 100-nm devices requires both a high overlay accuracy and a print
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc58bea644601d28749ead0d829d351b
https://doi.org/10.1007/0-306-47000-4_118
https://doi.org/10.1007/0-306-47000-4_118