Zobrazeno 1 - 10
of 73
pro vyhledávání: '"H. Tranduc"'
Autor:
Frédéric Morancho, Evgueniy Stefanov, Y. Weber, L. Theolier, K. Isoird, Jean-Michel Reynes, H. Tranduc, J. Roig
Publikováno v:
Microelectronics Journal
Microelectronics Journal, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
Microelectronics Journal, Elsevier, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
Microelectronics Journal, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
Microelectronics Journal, Elsevier, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
International audience; In this paper, the switching performance of 65V vertical N-channel FLYMOSFETs is investigated for the first time and compared with a conventional vertical DMOSFET (VDMOSFET). It is shown that measurements of the different capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ae158bce19d4be0e7f8412857c49731
https://doi.org/10.1016/j.mejo.2007.11.009
https://doi.org/10.1016/j.mejo.2007.11.009
Publikováno v:
The European Physical Journal Applied Physics. 10:203-209
In this paper, a new concept called "Floating Islands diode" (FLI-diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series. This concept can be applied to any power devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7701fb89086e57e5b917f6b97ba3e3e5
https://doi.org/10.1051/epjap:2000133
https://doi.org/10.1051/epjap:2000133
Publikováno v:
Microelectronics Journal. 30:551-561
In this paper, a new concept of lateral DMOSFET for medium voltage (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5860d72fdb30e376dd8f879a2e826d87
https://doi.org/10.1016/s0026-2692(98)00178-5
https://doi.org/10.1016/s0026-2692(98)00178-5
Publikováno v:
The European Physical Journal Applied Physics. 5:171-178
In this paper, we propose a model for the LDMOS transistor used for power amplification in the frequencies band 1.8–2.2 GHz dedicated to the mobile telephony system Digital Cellular System (DCS). This model takes into account the behaviour of each
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb5e970e9b8f7fe7591c81cba69c1a9
https://doi.org/10.1051/epjap:1999126
https://doi.org/10.1051/epjap:1999126
Publikováno v:
Microelectronics Reliability. 37:1375-1388
In this survey paper, the historical evolution of power MOS transistor structures is presented and mostly used actual devices are described. General considerations on current and voltage capabilities are discussed and configuration of popular structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778393eaf92e5f7225c193a4c6d7bc2a
https://doi.org/10.1016/s0026-2714(97)00009-7
https://doi.org/10.1016/s0026-2714(97)00009-7
Propriétés statiques et dynamiques du transistor MOS de puissance à tranchées (UMOS) 'basse-tension'
Publikováno v:
Journal de Physique III. 6:301-322
In this paper~ a contribution to the study of the performances of the trench power MOSFET'S in the low voltage range (< 100 Vi devices is done. A model for the power UMOSFET is presented, based on physical phenomena and electrical properties of the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899a81929bf9c06b78e6a21168aa214a
https://doi.org/10.1051/jp3:1996124
https://doi.org/10.1051/jp3:1996124
Publikováno v:
Journal de Physique III. 5:11-32
On analyse le principe de l'utilisation de la composante du courant dite sous le seuil du transistor MOS pour faire basculer la caracteristique courant-tension du thyristor MOS. Il est montre que l'on obtient une sensibilite elevee en commande de gri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d85563f42497f92fb501eb4fc98e8fa3
https://doi.org/10.1051/jp3:1995107
https://doi.org/10.1051/jp3:1995107
Publikováno v:
Journal de Physique III. 4:1383-1396
The DC trade-off ON resistance versus voltage capability is determined for the SiC multicellular Power MOSFET transistor. First, this limit is analytically calculated for the bulk material. Then, the influence of the size of the MOSFET cell is consid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8287959f40f45bf113f988e50007cab5
https://doi.org/10.1051/jp3:1994207
https://doi.org/10.1051/jp3:1994207
Publikováno v:
Journal de Physique III. 4:503-529
Les progres effectues dans la technologie des transistors MOS de puissance permettent de realiser des composants dont les performances en frequence et en puissance offrent l'opportunite d'une utilisation en tant qu'amplificateur dans les bandes VHF e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f13ae7ee4ce1b557bf5d9d16bc964c6e
https://doi.org/10.1051/jp3:1994142
https://doi.org/10.1051/jp3:1994142
Publikováno v:
Microelectronics Journal. 21:21-27
An efficient way to improve the ON resistance Ron of a vertical double-diffused MOS device is to implant a shallow, lightly doped layer over the drift area of the device. The evolution of Ron for different voltage handling capacities vs. (i) the junc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ae80957225c6f006d966a0752634ec8
https://doi.org/10.1016/0026-2692(90)90032-x
https://doi.org/10.1016/0026-2692(90)90032-x