Zobrazeno 1 - 10 of 34 pro vyhledávání: '"H. Toutah"'
1
Degradation in polysilicon thin film transistors related to the quality of the polysilicon material
Autor: Bertrand Boudart, Olivier Bonnaud, Taieb Mohammed-Brahim, Boubekeur Tala-Ighil, Jean-François Llibre, H. Toutah
Publikováno v: ESREF 2003; Poster
ESREF 2003; Poster, Oct 2003, Arcachon, France
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2003, 43 (9-11), pp.1531-1535. ⟨10.1016/S0026-2714(03)00271-3⟩
Microelectronics Reliability, Elsevier, 2003, 43, pp.1531-1535
HAL
Microelectronics Reliability, 2003, 43 (9-11), pp.1531-1535. ⟨10.1016/S0026-2714(03)00271-3⟩
Microelectronics Reliability, 2003, 43, pp.1531-1535
International audience
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::991107ecdc5df78181a5350f80d8a7a7
https://doi.org/10.1016/s0026-2714(03)00271-3
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4
Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material
Autor: A. Rahal, Boubekeur Tala-Ighil, Jean-François Llibre, K. Mourgues, Y. Helen, Jürgen Köhler, H. Toutah, R. Dassow, Tayeb Mohammed-Brahim
Publikováno v: Thin Solid Films. 383:299-302
The performance of polysilicon thin film transistors used in large-area electronics applications, directly depends on the structural quality of the channel material. Moreover, their stability under electrical stress is shown, in this work, to also de
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0df8a5193d3a9034bbfbd358264f5cd7
https://doi.org/10.1016/s0040-6090(00)01573-x
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5
Stability of polysilicon thin film transistors under switch operating
Autor: Tayeb Mohammed-Brahim, Jean-François Llibre, Olivier Bonnaud, K. Mourgues, F. Raoult, Y. Helen, H. Toutah, Boubekeur Tala-Ighil
Publikováno v: Scopus-Elsevier
Ageing of low temperature polysilicon Thin Film Transistors (TFTs) under AC gate bias stress is reported in this study. The active layer of these high performances transistors is amorphous deposited using Low Pressure Chemical Vapor Deposition (LPCVD
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::216f1d06d88f22e7008f4285e150b1ee
https://doi.org/10.1016/s0026-2714(00)00174-8
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6
Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors
Autor: H. Toutah, A. Rahala, Boubekeur Tala-Ighil, F. Raoult, Y. Helen, C. Prat, T. Mohammed-Brahima
Publikováno v: Microelectronics Reliability. 39:851-855
Ageing of low temperature polysilicon Thin Film Transistors (TFTs) is reported in this study. The active layer of these high performances transistors is amorphous deposited using Low Pressure Chemical Vapor Deposition (LPCVD) technique and then laser
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a76205e10e4763b74353bf8f77c6a79f
https://doi.org/10.1016/s0026-2714(99)00112-2
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8
Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors
Autor: F. Raoult, Boubekeur Tala-Ighil, Olivier Bonnaud, A. Rahal, Laurent Pichon, K. Mourgues, Tayeb Mohammed-Brahim, H. Toutah
Publikováno v: Microelectronics Reliability
Microelectronics Reliability, 1998, 38 (6-8), pp.1149-1153. ⟨10.1016/S0026-2714(98)00098-5⟩
Polysilicon Thin Film Transistors (TFT's), fabricated at temperature lower than 600°C, are now largely used in many applications, particularly in large area electronics. The reliability of these TFT's under different electrical conditions is then qu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d05a6a18561d01fd4075edaf18a09138
https://doi.org/10.1016/s0026-2714(98)00098-5
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9
Trench insulated gate bipolar transistors submitted to high temperature bias stress
Autor: Bertrand Boudart, Cheick Oumar Maïga, Boubekeur Tala-Ighil, H. Toutah
Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2005, 45 (9-11), pp.1728-1731. 〈10.1016/j.microrel.2005.07.098〉
Microelectronics Reliability, Elsevier, 2005, 45 (9-11), pp.1728-1731. ⟨10.1016/j.microrel.2005.07.098⟩
In this work we analyse the behavior of the Non Punch Through Trench Insulated Gate Bipolar Transistors submitted to High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) stresses. The electric stress has been accomplished during
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67c0547537746d65720850164f2c6d7b
https://hal.archives-ouvertes.fr/hal-01646872
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10
Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution
Autor: B. Boudart, H. Toutah, C.O. Maiga, B. Tala-Ighil
Publikováno v: 2005 European Conference on Power Electronics and Applications.
The work presented in this paper is concerned with the effects of a high temperature gate bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through IGBTs. The stresses were achieved during 1200 hours at 140degC. A particula
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::494e2d188c001db8f69e2797b67a3633
https://doi.org/10.1109/epe.2005.219370
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